Cu和Cr缓冲层对SmCo_5薄膜微观结构和磁性能的影响  

Influence of Cu and Cr buffer layers on the microstructure and magnetic properties of SmCo_5 thin films

作　　者：张敬凌 葛妮娜 王振[1] 谭士杰[1,2] 王玉波[1] 邱林俊 徐景[1] ZHANG Jing-ling;GE Ni-na;WANG Zhen;TAN Shi-jie;WANG Yu-bo;QIU Lin-jun;XU Jing(State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010, China;Southwest Institute of Applied Magnetics, Mianyang 621010, China)

机构地区：[1]西南科技大学四川省非金属复合与功能材料重点实验室-省部共建国家重点实验室培育基地,四川绵阳621000 [2]西南应用磁学研究所,四川绵阳621000

出　　处：《磁性材料及器件》2016年第5期23-27,44,共6页Journal of Magnetic Materials and Devices

基　　金：国家自然科学基金资助项目(50901050;51101079;11164011)

摘　　要：利用新型AE(Advanced Energy)脉冲电源采取共溅射的方式在Si片上制备不同结构的Cr/SmCo_5/Cr和Cu/SmCo_5/Cr薄膜,并分别研究Cu和Cr缓冲层对SmCo_5薄膜磁性能和微观结构的影响。以Cu作为缓冲层时,在优于2×10―5Pa的真空环境下通过对样品在650℃退火60min,可以获得较良好的硬磁性能,垂直膜面的矫顽力可以达到1308Oe。以Cr作为缓冲层时,在低于2×10^(-5)Pa的真空环境中,且在650℃退火60min便制备出样品。随后分别改变Cr缓冲层的厚度和SmCo_5的厚度并观察其对Cr/SmCo_5/Cr的磁性能的影响。Cr/SmCo5/Cr and Cu/SmCo5/Cr films with different structures were deposited on the Si waferby co-sputtering method using new AE(Advanced Energy)pulse power.Influence of Cu and Cr buffer layer on themagnetic properties and microstructure of SmCo5film was investigated.Experiments show that,for Cu as buffer layerthe sample annealed at650℃for60min in vacuum environment of superior to2×10―5Pahas better hard magneticproperties,with1308Oe of coercive force perpendicular to the film plane;for Cr as buffer layer the sample wasprepared by annealing at650℃for60min in a vacuum atmosphere below2×10―5Pa.Finally,the influence of thicknessof Cr buffer layer and SmCo5layer on the magnetic properties of Cr/SmCo5/Cr film was researched.

关 键 词：Cr(Cu)/SmCo5/Cr薄膜 缓冲层 结构 磁性能 

分 类 号：TM273[一般工业技术—材料科学与工程]