3-13 HRXRD Study of 6H-SiC Implanted With 300 keV He Ions  

作　　者：Du Yangyang 

机构地区：[1]不详

出　　处：《IMP & HIRFL Annual Report》2014年第1期103-104,共2页中国科学院近代物理研究所和兰州重离子研究装置年报（英文版）

摘　　要：In this paper, samples used are oriented 6H-SiC <0001> surface supplied by the MIT company. They were cutinto 10 mm10 mm10 mm in size. The 6H-SiC wafers were implanted with 300 keV He ions to a fluence of 11017cm?2 at 600?C. The implantation experiment was performed at the 320 kV Multi-discipline Research Platform for Highly Charged Ions of the Institute of Modern Physics,Chinese Academy of Sciences (CAS). The 300 keV Heions were implanted into 6H-SiC in vacuum (210?4Pa) and the current density was approximately 0.8A/cm2. After He implantation, the samples wereisochronally annealed at 750 and 1 200 ?C for 30 min,respectively, with the GSL1700X high-temperature vacuumsintering furnace in Ar atmosphere.

关 键 词：KEV HE IONS 

分 类 号：O4[理学—物理]