3-27 Characteristics of Luminescence of N Ion Irradiated LED  

作　　者：Gou Jie Zhang Chonghong Song Yin Yang Yitao Yi Xiaoyan Wei Xuecheng Xie Haizhong Liu Juan Xian Yongqiang Zhang Liqing 

机构地区：[1]不详

出　　处：《IMP & HIRFL Annual Report》2014年第1期121-122,共2页中国科学院近代物理研究所和兰州重离子研究装置年报（英文版）

摘　　要：In the present work, the LED chip was irradiated by using 59.6 MeV N ions in a terminal chamber of theSector-focused cyclotron (SFC) in the National Labortary of Heavy-ion Accelerators in Lanzhou. The 63 MeV Nions penetrated through a gold foil and scattered in a large area. The energy of ion was reduced to 59.6 MeV afterscattering of the gold foil. The LED was provided by the Semiconductor Lighting Center in Institute of Semiconductorin Beijing. The luminences of the LED before/after irradiation were tested through a integrating sphere inSemiconductor Lighting Center in Institute of Semiconductor in Beijing. The luminance was tested under a currentof 350 mA. Fig. 1 shows the relationship between the luminences and the irradiation fluences. The irradiation led

关 键 词：CHARACTERISTICS LUMINESCENCE IRRADIATED 

分 类 号：O4[理学—物理]