超薄埋氧层厚度对FDSOI器件短沟道效应影响  

The impacts of ultra-thin buried-oxide on short-channel effects of FDSOI devices

作　　者：谭思昊 李昱东[1,2] 徐烨峰 闫江[1,2] 

机构地区：[1]中国科学院微电子研究所,北京100029 [2]微电子器件与集成技术重点实验室,北京100029

出　　处：《东北石油大学学报》2017年第1期117-122,共6页Journal of Northeast Petroleum University

基　　金：国家科技重大专项(2013ZX02303-001-001)

摘　　要：随着CMOS技术发展到22nm技术节点以下,体硅平面器件达到等比例缩小的极限。全耗尽超薄绝缘体上硅CMOS(FDSOI)技术具有优秀的短沟道效应控制能力,利用TCAD软件,对不同埋氧层厚度的FDSOI器件短沟道效应进行数值仿真,研究减薄BOX厚度及器件背栅偏压对器件性能和短沟道效应的影响。仿真结果表明,减薄BOX厚度使FDSOI器件的性能和短沟道效应大幅提升,薄BOX衬底背栅偏压对FDSOI器件具有明显的阈值电压调制作用,6.00V的背栅偏压变化产生0.73V的阈值电压调制。在适当的背栅偏压下,FDSOI器件的短沟道特性(包括DIBL性能等)得到优化。实验结果表明,25nm厚BOX的FDSOI器件比145nm厚BOX的FDSOI器件关断电流减小近50%,DIBL减小近20%。The increasing short channel effect is posing greater challenge to all aspects of semiconductor industry for 22nm technology node and beyond.Fully depleted silicon on insulator(FDSOI)is a promising new technology for 22nm node and beyond and has demonstrated several advantages including outstanding short-channel effect control.We used simulating software TCAD to study the impacts of different thickness of buried-oxide layer on performance of FDSOI devices.We studied the impacts of thinned BOX layer and applying back-gate bias(V_(bg) )on short-channel effects(SCE)of FDSOI devices and explained the mechanism of the phenomenon.Simulation results suggest that FDSOI devices with Ultrathin BOX(UTB)structure demonstrates a much lower I_(off) and better DIBL performance comparing to thick BOX FDSOI devices.V_(bg) on UTB FDSOI devices modulates the threshold voltage of the FDSOI devices sensitively.Under appropriate V_(bg) ,the SS and DIBL performance of the FDSOI devices improve,indicating better SCE control.Experimental results verified the conclusions made by simulation results.25nm-BOX FDSOI devices demonstrate a 50%smaller I_(off) than 145nm-BOX FDSOI devices and a much better DIBL performance.

关 键 词：FDSOI 超薄埋氧层 仿真研究 短沟道效应 背栅偏压 

分 类 号：TN386.1[电子电信—物理电子学]