无压烧结SiC-AlN复相陶瓷导热和介电性能的研究  

Thermal conductivity and dielectric properties of SiC-AlN composites by pressureless sintering

作　　者：王玉春[1] 杨群[2] 潘勃[2] WANG Yuchun;YANG Qun;PAN Bo(Nanjing Sanle Electronic Information Industry Croup Co., Ltd, Nanjing 210032, China;College of Materials Science and Engineering, Nanjing Technology University, Nanjing 210009, China)

机构地区：[1]南京三乐电子信息产业集团有限公司,江苏南京210032 [2]南京工业大学材料科学与工程学院,江苏南京210009

出　　处：《电子元件与材料》2017年第5期6-11,共6页Electronic Components And Materials

基　　金：江苏高校优势学科建设工程项目;长江学者和创新团队发展计划资助项目(No.IRT1146)

摘　　要：添加10%(质量分数)BaO-SiO_2-Y_2O_3烧结助剂在氮气氛下无压烧结制备SiC-AlN复相陶瓷。研究了SiC含量、烧结温度对复相陶瓷烧结性能、显微结构、热导率和高频介电性能的影响。结果表明:样品中主晶相为6H-SiC和AlN,次晶相为Y_3Al_5O_(12)和Y_4Al_2O_9;当SiC质量分数为50%时,1850℃烧结1 h,显气孔率低于0.3%;而Si C含量继续增加,显气孔率显著上升。热导率、介电常数和介电损耗都随着烧结温度的升高而升高。当Si C质量分数为50%时,1900℃下复相材料呈现最好的热扩散系数和热导率,分别为26.3 mm^2·s^(–1)和61.5W·m^(–1)·K^(–1);1850℃下获得的Si C-Al N复相陶瓷在12.4~18 GHz频率范围内获相对介电常数和介电损耗分别为33~37和0.4~0.5,该频段内随频率升高,介电常数和介电损耗下降。SiC-AlN composites with10%(mass fraction)BaO-SiO2-Y2O3additives were fabricated by pressureless sintering in a nitrogen atmosphere.The effects of SiC content and sintering temperature on the sinterability,microstructure,thermal conductivity and high-frequency dielectric properties were characterized.In addition to6H-SiC and AlN,the samples also contain Y3Al5O12and Y4Al2O9.The apparent porosity of sample with the mass fraction of50%SiC sintered at1850℃for1h is lower than0.3%.With the increasing of SiC content,the apparent porosity is increased significantly.Thermal conductivity,dielectric constant and dielectric loss increase with the raising of sintering temperature.SiC-AlN ceramics sintered with50%(mass fraction)SiC at1900℃exhibite the best thermal diffusivity and thermal conductivity,respectively26.3mm2·s-1and61.5W·m-1·K-1.The relative dielectric constant and dielectric loss of the sample sintered with50%mass fraction SiC at1850℃are33-37and0.4-0.5at12.4-18GHz.The dielectric constant and dielectric loss of the samples decrease as the frequency of electromagnetic waves rise from12.4GHz to18GHz.

关 键 词：SiC-AlN 无压烧结 BaO-SiO2-Y2O3烧结助剂 氮气氛 热导率 介电性能 

分 类 号：TN28[电子电信—物理电子学]