交叉杆结构忆阻器件的研究进展  

Research progress of cross-bar resistive switching memory devices

作　　者：敬秦媛 程海峰[1] 刘东青[1] 张朝阳[1] JING Qinyuan;CHENG Haifeng;LIU Dongqing;ZHANG Chaoyang(Key Laboratory of Advanced Ceramic Fibers & Composites, National University of Defense Technology, Changsha 410073, China)

机构地区：[1]国防科技大学新型陶瓷纤维及其复合材料重点实验室,湖南长沙410073

出　　处：《电子元件与材料》2017年第6期8-13,共6页Electronic Components And Materials

基　　金：国家自然科学基金资助(No.51502344)

摘　　要：忆阻器被认为是除电容器、电感器、电阻器之外的第四种无源器件,具有器件结构简单、操作速度快、功耗小等优点,是具有电阻记忆特性的非易失性的电阻元件。而交叉杆结构忆阻器件作为忆阻器的一种结构,由于其较之其他结构的忆阻器具有结构简单、集成度高、容错性和并行性优良等特性,受到了外界广泛的关注及研究。文章综述了近年来交叉杆忆阻器的兴起和发展现状,阐述了以交叉杆结构为基础的各类忆阻器的制备及应用。Memristor is considered to be a fourth passive device other than capacitors,inductors and resistors.It has the advantages of simple device structure,fast operation speed and low power consumption.It is nonvolatile with resistive memory characteristic of the original resistance.The cross-bar structure as a memristor,because of its simple structure,high integration level,high error tolerance and excellent parallel characteristics,receives the outside world wide attention and research.In this paper,the rise and development of the cross-bar resistive switching memory devices in recent years is reviewed,and the preparation and application of various memristors based on cross-bar structure is described.

关 键 词：交叉杆 忆阻器 综述 记忆 柔性 并行性 

分 类 号：TN602[电子电信—电路与系统]