Effect of temperature on copper corrosion in high-level nuclear waste environment  

高放核废料存储环境下温度对纯铜腐蚀的影响（英文）

作　　者：De-cheng KONG Chao-fang DONG Kui XIAO Xiao-gang LI 孔德成;董超芳;肖葵;李晓刚(北京科技大学腐蚀防护中心教育部重点实验室,北京100083)

机构地区：[1]Corrosion and Protection Center, Key Laboratory for Corrosion and Protection, Ministry of Education,University of Science and Technology Beijing, Beijing 100083, China

出　　处：《Transactions of Nonferrous Metals Society of China》2017年第6期1431-1438,共8页中国有色金属学报（英文版）

基　　金：Project(FRF-TP-14-011C1) supported by the Fundamental Research Funds for the Central Universities,China;Project(2014CB643300) supported by the National Basic Research Program of China

摘　　要：The effect of temperature on the corrosion behavior of copper in simulated high-level nuclear waste environment wassystematically studied.Electrochemical methods,including electrochemical impendence spectra,Mott–Schottky technology,cyclicpolarization,and potentiostatic polarization,were employed to characterize the corrosion behavior of copper at different temperatures.Stereoscopic microscopy and scanning electron microscopy were used to examine the surface morphology,and X-ray photoelectronspectroscopy analysis was used to identify the composition of the passive film.The experimental results show that corrosionresistance of the passive film does not blindly decrease with the increase of temperature but increases at60°C owing to a compactouter layer;there is a potential for pitting corrosion,which decreases as the temperature increases.The main product of copper in ananaerobic aqueous sulfide solution is Cu2S but the content of CuS increases at higher temperatures.The whole passivation rangeshows p-type semiconductor characteristics and the magnitude of the acceptor density is1023cm-3,which increases with increasingtemperature.系统研究在高放核废料存储环境下温度对纯铜腐蚀的影响。采用交流阻抗谱、Mott-Schottky技术、动电位以及恒电位极化曲线分析纯铜在不同温度下的腐蚀行为;并采用体视显微镜以及扫描电镜观察样品表面形貌,同时结合X射线光电子能谱分析钝化膜成分。结果表明,钝化膜阻抗并不随着温度的升高而一直降低,在60°C由于致密的外层结构阻抗反常增大;点蚀在此环境下可能发生且钝化膜的点蚀电位随着温度的升高而降低;钝化膜主要成分为Cu_2S,而CuS的含量随着温度的升高而增加;钝化膜主要呈p型半导体特性,阳离子空位密度在1023 cm^(-3)数量级且随着温度的升高其密度增大。

关 键 词：copper corrosion SULFIDE nuclear waste disposal TEMPERATURE electrochemical performance 

分 类 号：TG178[金属学及工艺—金属表面处理]