适用于器件级到系统级热仿真的IGBT传热模型  

IGBT Thermal Model for Thermal Simulation of Device to System

作　　者：刘宾礼[1] 罗毅飞[1] 肖飞[1] 汪波[1] Liu Binli;Luo Yifei;Xiao Fei;Wang Bo(National Key Laboratory of Science and Technology on Vessel Integrated Power System Naval University of Engineering Wuhan 430033 China)

机构地区：[1]海军工程大学舰船综合电力技术国防科技重点实验室,武汉430033

出　　处：《电工技术学报》2017年第13期1-13,共13页Transactions of China Electrotechnical Society

基　　金：国家自然科学基金重点项目(51490681);国家自然科学基金青年项目(51507185)资助;国家重点基础研究发展计划(973计划)(2015CB251004)

摘　　要：提出一种基于器件到系统的等级与传热网络结构本身的多时间尺度特征建立绝缘栅双极型晶闸管(IGBT)传热模型的建模方法。基于热传导理论和经典Cauer传热RC网络结构,建立IGBT传热网络结构模型,查明单层与多层热网络结构的结温运行规律以及简化标准与方法。在此基础上,以器件到系统对IGBT传热模型的不同需求为主线,以器件封装结构各层时间常数的不同时间尺度为切入点,建立适用于器件级到系统级热仿真的IGBT传热模型。仿真与实验结果验证了模型的正确性与高效性。所建立的IGBT传热模型对于查明IGBT器件的传热网络结构特征与结温运行规律,实现电力电子器件到系统的独立与联合仿真具有一定的理论意义和应用价值。Based on the device to system grade and multi-timescale characteristics of thermalnetwork,a method of thermal modelling is proposed.The thermal network model of insulated gatebipolar transistor(IGBT)is established based on the network structure of RC and thermal theory.Theoperation rules of junction temperature,simplified standard and method of single-layer and multi-layernetwork structure is found out.On this basis,taking the different requirements of device to system forthermal model as the main line and the different timescale of each package layer time constant as thebreakthrough point,the IGBT thermal models for device to system thermal simulation are established.The results of simulations and experiments verify the rightness and accuracy of the established models.It is significant in theory and practical application for finding out the characteristics of thermal networkstructure and the operation rules of junction temperature and realizing the independent and jointsimulation of power electronic device to system.

关 键 词：传热网络模型 结温运行规律 器件到系统 模型精度 模型效率 

分 类 号：TN306[电子电信—物理电子学]