P型微晶硅在柔性太阳电池中的应用研究  

Application of P-μc-Si:H thin film material to thin film solar cells on flexible substrate

作　　者：靳果[1] 袁铸[1] 胡居涛 JIN Guo;YUAN Zhu;HU Ju-tao(Henan Polytechnic Institute, Nanyang Henan 473000, China;Jiangsu Wujin Hanergy Thin-GIm Solar Energy Co.,Ltd, Changzhou Jiangsu 213100, China)

机构地区：[1]河南工业职业技术学院机电自动化学院,河南南阳473000 [2]江苏武进汉能薄膜太阳能有限公司,江苏常州213100

出　　处：《电源技术》2017年第7期1025-1027,共3页Chinese Journal of Power Sources

摘　　要：以B(CH_3)_3为掺杂剂,采用正交实验法,以硅烷浓度、B(CH_3)_3掺杂比、反应压强及气体总流量等主要沉积参数为实验组变量,对P型微晶硅薄膜进行初步优化。在玻璃衬底上沉积厚度为80 nm左右的P型微晶硅(μc-Si:H)薄膜,通过测试材料暗态电导率、XRD、Raman等,研究了上述沉积参数对材料电学和微结构性能的影响,并在此基础上做进一步的参数优化,得到更高电导的微晶硅薄膜;将其应用于PEN衬底的非晶硅薄膜太阳电池中,得到6%的初始效率。B(CH3)3was used as dopant to deposit the P-type microcrystalline(P-滋c-Si:H)films.To investigate these materials,the major processing parameters of silane concentration,B(CH3)3doping ratio,reaction pressure and gas flow rate were primarily optimized by the method of orthogonal experiment.These materials were deposited on glass with the thickness of about80nm and the influences of above parameters on the materials'electrical and microstructure character were investigated by tested dark conductivity,XRD and Raman.The higher quality materials were further investigated on the base of former study.Finally,the beneficial effect of our electrical findings was used to fabricate a-Si:H solar cell on PEN flexible substrate with an initial efficiency of6%.

关 键 词：P型微晶硅薄膜 B(CH3)3 柔性衬底 非晶硅太阳电池 

分 类 号：TM914[电气工程—电力电子与电力传动]