ZnO/GaN异质结发光二极管光谱改善研究进展  

Research Progress in Spectral Improvement of ZnO/GaN Heterojunction Light Emitting Diode

作　　者：刘辉[1] 史敏娜[1] 王小峰[1] Liu Hui;Shi Minna;Wang Xiaofeng(Patent Examination Cooperation Center of the Patent Office,SIPO,Henan,Zhengzhou Henan 450000)

机构地区：[1]国家知识产权局专利局专利审查协作河南中心,河南郑州450000

出　　处：《河南科技》2017年第13期144-146,共3页Henan Science and Technology

摘　　要：ZnO缺陷发光及ZnO/GaN界面发光严重降低了n-ZnO/p-GaN发光二极管的性能。本文概述n-ZnO/p-GaN异质结的结构和发光存在的问题,详细介绍该方面的最新研究成果。通过引入界面层、利用量子限制效应等技术,使n-ZnO/p-GaN发光二极管的光谱质量和发光效率得到改善。The ZnO defects emission and the ZnO/GaN interface emission have reduced the performance of n-ZnO/p-GaN light emitting diode.In this paper,the problems of structure and electroluminescence were introduced briefly,the last results on this point were expounded detailed.The spectra quality and luminescence efficiency of n-ZnO/pGaN light emitting diode have been improved by using the methods of interface layer,quantum confinement effects and localized states bound.

关 键 词：ZnO/GaN发光二极管 界面层 量子限制效应 

分 类 号：TN312.8[电子电信—物理电子学]