晶硅材料太阳电池电势诱导衰减问题研究  

Study on potential induced attenuation of crystalline silicon solar cells

作　　者：刘希璐[1] 王华[1] 赵科 LIU Xi-lu;WANG Hua;ZHAO Ke(Department of Mechanical and Electrical Engineering, Shangqiu Polytecnic, Shangqiu Henan 476000, China;Shangqiu Bodi Photovoltaic Technology Co., Ltd., Shangqiu Henan 476000, China)

机构地区：[1]商丘职业技术学院机电工程系,河南商丘476000 [2]博迪光伏科技有限公司,河南商丘476000

出　　处：《电源技术》2017年第8期1146-1147,1164,共3页Chinese Journal of Power Sources

基　　金：河南省科技厅2015科技攻关计划项目(SKL-2015-2478)

摘　　要：传统晶硅材料太阳电池所发生的电势诱导衰减现象受可动电荷Na^+在硅表面聚积的影响,对发生电势诱导衰减现象的太阳电池的漏电区域和非漏电区域分别采用双电荷层导致p-n结导通的假说和扩展的肖克莱-里德-霍尔复合模型进行了研究。结果表明,组件效率受可动电荷Na^+的影响且和被SiN_x的场钝化作用所屏蔽的隐性缺陷之间的关系密切。通过增强界面的钝化效果,阻止Na^+与界面处的隐性缺陷相结合等措施,有利于抗电势诱导衰减组件的制备。Traditional crystalline silicon solar cell of potential induced attenuation phenomenon,called PID phenomenon,was influenced by moving electric charge Na+accumulation in the silicon surface.The solar battery leakage area and the leakage area of the electrical double layer were used respectively to lead to the hypothesis and the expansion of the p-n junction conduction Shockley-reed-hall composite model was analyzed.The analysis results show that the module efficiency is affected by moving charge Na+and by SiN field passivation shielding the close relation between the hidden defects.By enhancing interface passivation effect,the hidden defects of Na+and which combinated with interfaces were prevented.It was beneficial to the preparation of PID component.

关 键 词：太阳电池 电势诱导衰减现象 晶硅材料 

分 类 号：TM914[电气工程—电力电子与电力传动]