Se位掺杂对燃烧合成Cu_2SnSe_3热电性能的影响  被引量:2

Effect of Se-site Doping on Thermoelectric Properties of Cu_2SnSe_3 Synthesized by Combustion

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作  者:马瑞[1,2] 李宇洋[1] 刘光华[1] 李江涛[1] 韩叶茂[1] 周敏[1] 李来风[1] MA Rui;LI Yuyang;LIU Guanghua;LI Jiangtao;HAN Yemao;ZHOU Min;LI Laifeng(Key Laboratory of Cryogenics, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China;University of Chinese Academy of Sciences, Beijing 100049, China)

机构地区:[1]中国科学院理化技术研究所低温重点实验室,北京100190 [2]中国科学院大学,北京100190

出  处:《陶瓷学报》2017年第4期466-470,共5页Journal of Ceramics

基  金:国家自然科学基金资助(51422211;513278067)

摘  要:Cu_2SnSe_3是一种不含稀贵或有毒元素的新型热电材料,具有较低的热导率和较高的电导率,通过掺杂可大大提高Cu_2SnSe_3的热电优值,使其有望在中温区附近得到应用。通过燃烧合成直接一步制备出致密的Cu_2SnSe_3块体材料,其相对密度在96%以上,最大热电优值为0.48,与传统烧结工艺制备的样品性能相当,整个反应过程在数分钟内即迅速完成,从而极大的简化了合成工艺。为进一步提高Cu_2SnSe_3材料的热电性能,本文利用燃烧合成方法制备多晶块体材料,采用S、Te两种元素对Cu_2SnSe_3进行掺杂,系统研究了掺杂对热电性能的影响。结果表明,S、Te两种元素的Se位掺杂提高了Seebeck系数,降低了热导率和电导率,最终使热电优值有所提升。S掺杂Cu_2SnSxSe_(3-x)样品中,当x=0.15时在温度773 K下取得最大ZT值为0.66。Te掺杂Cu_2SnTe_xSe_(3-x)样品中,当x=0.05时在温度773 K下取得最大ZT值为0.40。Cu2SnSe3is a kind of new thermoelectric material with low or no poisonous elements.It has low thermal conductivity and highconductivity.The doping of Cu2SnSe3can greatly improve the thermoelectricity of Cu2SnSe3,which is expected to be applied near the middletemperature region.The relative density of Cu2SnSe3bulk material prepared by direct combustion synthesis is over96%,and the maximumthermoelectricity is0.48.It is equivalent to the sample prepared by the traditional sintering process.The whole reaction process is completedin a few minutes,thus greatly simplifying the synthesis process.In order to further improve the thermoelectric properties of Cu2SnSe3materials,the polycrystalline bulk materials were prepared by combustion synthesis method.The effects of doping on the thermoelectricproperties were investigated by doping Cu2SnSe3with S and Te.The results show that the Se doping of S and Te increases the Seebeckcoefficient,decreases the thermal conductivity and electrical conductivity,and improves the thermoelectricity value.S doped Cu2SnSxSe3-xsamples,when x=0.15at773K temperature to obtain the maximum ZT value of0.66.Te-doped Cu2SnTexSe3-x samples,the maximum ZTvalue was0.40at a temperature of773K at x=0.05.

关 键 词:热电性能 Cu2SnSe3 燃烧合成 Se位掺杂 

分 类 号:TQ174.75[化学工程—陶瓷工业]

 

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