IGBT驱动保护电路专利技术综述  

Overview of Patent Technology for IGBT Drive and Protection Circuit

作　　者：朱雪珍 马璐璐 Zhu Xuezhen;MA Lulu(Patent Examination Cooperation Henan Center of The Patent Office, SIPO, Zhengzhou 450000, Henan, China)

机构地区：[1]国家知识产权局专利局专利审查协作河南中心,河南郑州450000

出　　处：《河南科技》2017年第18期58-59,共2页Henan Science and Technology

摘　　要：本文从专利文献的角度对IGBT驱动保护电路的发展进行分析,介绍了IGBT驱动保护电路的技术发展路线以及国内外重要技术的发展路线。This paper analyzes the development of IGBT drive and protection circuit technology from the perspective of patent,introduces the development route of IGBT drive and protection circuit,and the technical route and development direction of domestic important technology.

关 键 词：IGBT 驱动保护 专利 技术发展 

分 类 号：G306[文化科学] TN322.8[电子电信—物理电子学]