硅光子芯片工艺与设计的发展与挑战  

The Progress and Chal enges of Silicon Photonics Process and Design

作　　者：郭进[1] 冯俊波[1] 曹国威[1] GUO Jin;FENG Junbo;CAO Guowei(CETC38, Hefei 230088, China)

机构地区：[1]中国电子科技集团公司第三十八研究所,安徽合肥230088

出　　处：《中兴通讯技术》2017年第5期7-10,共4页ZTE Technology Journal

基　　金：国家自然科学基金(61475144);科技部国际合作项目(2015DFE12910);安徽省科技攻关计划项目(1604a0902123)

摘　　要：针对硅光子器件的特殊性提出了与互补金属氧化物半导体(CMOS)工艺兼容的硅光工艺开发的基本原则和关键问题。相比于工艺,硅光在芯片设计的方法和流程方面面临更多的挑战,例如硅光子技术与CMOS工艺兼容性,可重复IP制定及复杂芯片的快速设计等。故充分利用先进的半导体设备和工艺、个别工艺的特殊控制、多层次光电联合仿真是硅光子芯片从小规模设计走向大规模集成应用的关键。光子链路的仿真、器件行为级模型、版图的布局布线及验证等是硅光芯片走向成熟的关键。In this paper,the fundamental principles and key issues of the siliconoptical process compatible with complementary metal oxide semiconductor(CMOS)are described.Silicon optics faces many challenges in terms of chip design methodsand processes,including the process compatibility of CMOS and silicon photonics,the design of repeatable IP and the quick design of complicate chips.To achieve thechange from small scale design to the large scale integrated application,some issuesshould be emphasized,including the full use of the advanced semi-conductorequipment and process,the control of some special processes and the simulationand design of opto-electronics devices.And the optical link simulation,behavior levelmodel,floor planning,placement and routing,and the layout verification are the keyfactors to the maturity of silicon optical chip.

关 键 词：硅基光子学 设计方法 设计流程 大规模集成 

分 类 号：TN402[电子电信—微电子学与固体电子学]