Modeling and validation of magnetic tunnel junction device  

磁性隧道结器件的建模与验证（英文）

作　　者：Joyanto Roychoudhary Sumitesh Majumder T K Maiti 

机构地区：[1]Dept, o f Electronics & Communication Engineering, B P Poddar Institute of Managemnenit and Technology ,Kolkata 700052, India [2]Dept, of A pplied Electronics Instrumentation Engineering, Netaji Subhash Engineering College,Kolkata 700152 , India

出　　处：《Journal of Measurement Science and Instrumentation》2017年第3期261-263,共3页测试科学与仪器（英文版）

摘　　要：We have presented here a simple model of magnetic tunnel junction(MTJ)device and the proposed MTJ model is utilizedfor validation purpose and also to study its tunnel magneto-resistance(TMR)effect by both simulation and experimentalmethod using an operational amplifier(OPAMP)based inverting amplifier.Experimental results substantiates both the simulatedand theoretical outcomes.

关 键 词：magneto-electronics magnetic tunnel junction (MTJ) inverting amplifier MultiSim software 

分 类 号：TN303[电子电信—物理电子学]