Peculiarity of magnetoresistance of discontinuous ferromagnetic thin films  

作　　者：Yu.O. Shkurdoda I.M. Pazukha A.M. Chornous 

机构地区：[1]Department of Applied Physics,Sumy State University,Sumy 40007,Ukraine

出　　处：《International Journal of Minerals,Metallurgy and Materials》2017年第12期1459-1463,共5页矿物冶金与材料学报（英文版）

基　　金：funded by the State Program of the Ministry of Education and Science of Ukraine (0116U002623)

摘　　要：The magnetoresistive properties of discontinuous ferromagnetic Fe and Co thin films deposited by electron-beam sputtering onto glass substrates at room temperature were investigated. Tunnel magnetoresistance(MR) was observed for all of the as-deposited samples. The maximum MR was observed for Fe thin films with an effective thickness of 17 nm. In the case of the Co thin films, the annealing process led to a change of the type of MR to anisotropic at Co film thicknesses(dCo) of 15 ≤ d_(Co) ≤ 25 nm and to positive isotropic at thicknesses of d_(Co) < 15 nm. By contrast, the MR type of Fe thin films did not change.The magnetoresistive properties of discontinuous ferromagnetic Fe and Co thin films deposited by electron-beam sputtering onto glass substrates at room temperature were investigated. Tunnel magnetoresistance(MR) was observed for all of the as-deposited samples. The maximum MR was observed for Fe thin films with an effective thickness of 17 nm. In the case of the Co thin films, the annealing process led to a change of the type of MR to anisotropic at Co film thicknesses(dCo) of 15 ≤ d_(Co) ≤ 25 nm and to positive isotropic at thicknesses of d_(Co) < 15 nm. By contrast, the MR type of Fe thin films did not change.

关 键 词：DISCONTINUOUS THIN FILMS FERROMAGNETIC structure MAGNETORESISTANCE PECULIARITY 

分 类 号：TB383.2[一般工业技术—材料科学与工程]