沉积温度对热蒸发法制备SiO_2一维纳米材料的影响  

Effect of Deposition Temperature on SiO_2 One-dimensional Nanomaterial Prepared by Thermal Evaporation Method

作　　者：吕航 刘秋颖 杨喜宝 赵景龙 王秋实 陆晓东 姚震[3] 吕俊超[4] LYU Hang;LIU Qiu-ying;YANG Xi-bao;ZHAO Jing-long;WANG Qiu-shi;LU Xiao-dong;YAO Zhen;LYU Jun-chao(College of New Energy, Bohai University, Jinzhou 121007, China;Laboratory Management Center, Bohai University, Jinzhou 121013, China;College of Science, Liaoning University of Technology, Jinzhou 121001, China;Shenyang Institute of Geology and Mineral Resourche, Shenyang 110032, China)

机构地区：[1]渤海大学新能源学院,锦州121007 [2]渤海大学实验管理中心,锦州121013 [3]辽宁工业大学理学院,锦州121001 [4]沈阳地质矿产研究所,沈阳110032

出　　处：《人工晶体学报》2017年第10期2050-2053,2066,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(11304020;11504150;115404028)

摘　　要：利用热蒸发法在N型硅片表面成功制备出大面积SiO_2纳米线和SiO_2纳米棒结构。采用X射线粉末衍射(XRD),扫描电子显微镜(SEM),X射线能量色散谱(EDX),拉曼光谱(RS)和光致发光(PL)对合成的产物进行了表征。结果表明,用此方法生长的SiO_2纳米材料,其结构和形貌与生长参数关系密切,随着沉积温度降低纳米线长度变短,最后呈现出棒状结构。此外,还研究了SiO_2纳米结构独特的光学性质。该研究对改善光电子半导体器件的性能应用具有重要意义。Large area Si02nanowires and Si02nanorods were successfully synthesized on the surface of N-type silicon wafer by the thermal evaporation method.The as-synthesized samples were systematically researched by X-ray powder diffraction(XRD),scanning electron microscopy(SEM),electron energy-dispersive(EDX),Raman spectroscopy(RS)and photoluminescence(PL).The results indicate that the structures and morphologies of the product are closely related to the growth parameters by this method.As the deposition temperature decreases,the length of the nanowires becomes shorter,and finally showing a rod-like structure.Furthermore,the unique optical properties of Si02nanostructures were also studied.This study is important for improving the performance of optoelectronic semiconductor devices.

关 键 词：热蒸发法 Si02纳米线 Si02纳米棒 光学性质 

分 类 号：TB43[一般工业技术]