大功率电力电子器件相变冷却技术的实验研究  

Experimental study on phase-change cooling technology in high power electronic devices

作　　者：马本栋 胡书举[1] 王玲玲[1] 国建鸿[1] Ma Bendong;Hu Shuju;Wang Lingling;Guo Jianhong(Institute of Electrical Engineering, Chinese Academy of Sciences, Beijing 100190, China)

机构地区：[1]中国科学院电工研究所,北京100190

出　　处：《电测与仪表》2017年第22期1-5,10,共6页Electrical Measurement & Instrumentation

基　　金：太阳能发电技术北京市重点实验室2015年度科技创新基地培育与发展专项项目(Z151100001615004)

摘　　要：大功率电力电子器件的冷却散热问题,已成为集成化大电容发展的瓶颈,受到越来越广泛的关注。文中采用相变冷却技术,设计两种冷板:带有强化换热结构和非强化换热结构,用于绝缘栅双极型晶体管模块(Insulated Gate Bipolar Transistor IGBT)散热,对两种冷板温度分布进行数值模拟,并利用自建的实验平台对两种冷板的性能进行模拟试验。结果表明:两种结构的冷板均能满足功率器件的结温要求,同功率条件下,带有强化换热结构的冷板温度更低,具有更好的均温性,在3 000 W和4 000 W功率下,冷板温度分别为56.6℃和59.5℃,为系统结构设计提供指导。More and more attentions are paid for the heat dissipation problem of Megawatt class converter IGBT since it has been the bottleneck in the development of integrated large capacitors.This paper presents an experiment in which two kinds of IGBT module cold plates are designed,one normal and the other with heat transfer enhancement respectively.The temperature distributions of the two kinds of cold plates were simulated numerically,and the performances also turned out by using self built experimental platform.The two kinds of different structural cold plates could satisfy the requirements of the power device junction temperature,and which of the heat transfer enhancement cold plates showed lower than5K with more uniform temperature distribution.In the power of3000W and4000W,the temperature of cold plates read56.6℃and59.5℃,which provided guidance for system structure design.

关 键 词：冷却结构 相变冷却 实验研究 数值模拟 

分 类 号：TM124[电气工程—电工理论与新技术]