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作 者:张建刚[1] 谢晋鹏 马望京[2] 梁庆华[2] 李智[2] ZHANG Jiangang;LI Zhi;XIE Jinpeng;MA Wangjing;LIANG Qinghua(School of Arts and Sciences , Shanxi Agricultural University, Taigu Q3Q8Q1, Shanxi, P. R. China;Technical Institute of Physics and Chemistry, Chinese Academy of Sciences , Beijing 100190, P. R. China)
机构地区:[1]山西农业大学文理学院,山西太谷030801 [2]中国科学院理化技术研究所,北京100190
出 处:《影像科学与光化学》2017年第6期824-832,共9页Imaging Science and Photochemistry
摘 要:通过高温固相法合成Gd_2O_2S∶Tb^(3+)微米亚微米晶,研究了不同反应条件对晶体生长及其荧光发光性能的影响。利用场发射扫描电镜(FE-SEM)、高分辨透射电子显微镜(HRTEM)、X射线粉末衍射仪(XRD)和荧光光谱(PL)对Gd2O2S∶Tb^(3+)粉末进行表征。结果表明:反应时间、温度及Tb掺杂量对产物的荧光发光强度有显著影响,当Tb^(3+)掺杂量为7%时,在900℃下反应4h的样品荧光强度最佳。实验合成的Gd_2O_2S∶Tb^(3+)粉末具有优越的发光性能,用254nm光激发时,在λ=543nm处有一对应于Tb^(3+)(5D4→7F5)跃迁的强发射峰。Gd202S:Tb3+micro/submicro crystals were prepared by high temperature solid phase method and the effects of reaction conditions on the crystals’growth and its luminescence properties were investigated.By means of characterization methods of field emission scanning electron microscopy(FE-SEM),high-resolution transmission electron microscope(H R T E M),the X-ray powder diffraction(X R D)and fluorescence spectroscopy(P L),the results obtained show that each factor such as reaction time,temperature and Tb3+doping quantity in the Gd202S:Tb3+crystals?growth et.al.has obviously effect on the luminescence properties.The sample doped with7%of Tb3+,which was synthesized at900°C for4h has the optimal fluorescence performance.The Gd202S:Tb3+synthesized as above has excellent luminescent properties:a strong emission peak at A=543nm appears when the crystals were excited by254nm light,which corresponds to Tb3+(5D4^7F5)transition.
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