M型微波器件中阴极的电子回轰与二次发射  

Electron Back Bombard and Secondary Electron Emission of Cathode in M Type Microwave Devices

作　　者：张兆镗[1] ZHANG Zhao-tang(University of Electronic Science and Technology of China, Chengdu 610054, China)

机构地区：[1]电子科技大学,四川成都610054

出　　处：《真空电子技术》2017年第3期11-13,共3页Vacuum Electronics

摘　　要：在磁控管及其它M型微波器件中,管内阴极的电子回轰和二次电子发射是其固有的本质特性,这是与O型器件电子枪中阴极的电子发射存在着本质的区别。这就为在M型微波器件中釆用冷阴极提供了可能性,磁控管及其它M型微波器件中若干管型已成功地釆用了冷阴极,而且工作正常,这就充分说明了这一预测的正确性。In magnetrons and other M type microwave devices,electron back bombard and secondary electron emission of cathode are inherent phenomena,which are differ from those in O type microwave devices such as klystrons and TWTs.This provides the possibility of using cold cathodes in M type microwave devices.Cold cathodes have been successfully used in magnetrons and some other M type microwave devices,demonstrating the correctness of this prediction.

关 键 词：M型器件 磁控管 .型器件 阴极 电子回轰 二次电子发射 回旋倍增效应 冷阴极 

分 类 号：TN103[电子电信—物理电子学]