Ta_2O_5掺杂对0.48BCT-0.52BZT陶瓷结构及压电性能的影响  

Effect of Ta_2O_5 doping on structure and piezoelectric properties of 0.48BCT-0.52BZT ceramics

作　　者：黄伟 林家齐[1] 杨文龙[1] HUANG Wei;LIN Jiaqi;YANG Wenlong(Harbin University of Science and Technology, Harbin 150080, China)

机构地区：[1]哈尔滨理工大学应用科学学院,哈尔滨150080

出　　处：《功能材料》2017年第12期12171-12176,共6页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(61372013)

摘　　要：采用固相烧结法制备锆钛酸钡钙(BCZT)无铅压电陶瓷,研究不同Ta_2O_5掺杂浓度对陶瓷结构和压电、铁电、介电性能的影响。实验结果表明,不同掺杂量的钽烧结的BCZT无铅压电陶瓷均为典型的钙钛矿结构,陶瓷晶粒生长均匀,钽的掺杂对晶粒的生长有较大的影响;0.48(Ba_(0.7)Ca_(0.3))TiO_3-0.52Ba(Zr_(0.2)Ti_(0.8))O_3的压电系数、逆压电系数、剩余极化强度都在掺杂量0.3%(摩尔分数)Ta_2O_5最优,综合性能为d_(33)为489 pC/N,2 kV/mm下逆压电系数高达657 pm/V,1 kV/mm下P_r为9.61μC/cm^2,E_c为0.237 kV/mm。(BCZT)lead free piezoelectric ceramics were prepared by solid state sintering method.The effects of different dibasic pentoxide doping concentrations on the ceramic structure and piezoelectric,ferroelectric and dielectric properties were investigated.The experimental results show that BCZT lead free piezoelectric ceramics with different doping amounts are typical perovskite structure,and the ceramic grains grow evenly.The doping of tantalum has a great influence on the growth of grains.Ba0.7Ca0.3)TiO3-0.52Ba(Zr0.2Ti0.8)O3,the inverse piezoelectric coefficient and the remnant polarization are both0.3mol%Ta2O5,and the comprehensive performance is d33of489pC/N,the piezoelectric coefficient is up to657pm/V at2kV/mm,Pr is9.61μC/cm2and Ec is0.237kV/mm at1kV/mm.

关 键 词：锆钛酸钡钙 TA2O5 压电性能 无铅压电陶瓷 

分 类 号：O437.2[机械工程—光学工程]