InSb单元及线列器件I-V特性失效分析  

Failure analysis on I-V characteristics of InSb unit and linear devices

作　　者：史梦然[1] 史梦思 SHI Meng-ran;SHI Meng-si(North China Research Institute of Electro-Optics,Beijing 100015 ,China)

机构地区：[1]华北光电技术研究所,北京100015

出　　处：《激光与红外》2018年第2期205-208,共4页Laser & Infrared

摘　　要：InSb单元及线列器件广泛应用于中波红外探测器的研制。InSb器件I-V中测筛选既可以有效地检测出适于装配使用的合格芯片,还可对前道工艺存在的问题实现有效监控和反馈。本文采用半导体参数分析仪对InSb单元及线列器件进行I-V测试,对日常测试中出现的I-V失效进行归纳,并对典型失效情况进行了失效原因分析,发现影响探测器芯片直流特性的主要因素是表面漏电。The InSb unit and linear devices are widely applied in mid-infrared detector.The I-V testing of InSb de-vices can be used to choose the qualified chip which is suitable for the assembly,and can monitor the problems in the device fabrication processing.The semiconductor parameter analyzer was used to test the current-voltage characteristics of the InSb unit and linear devices.Then the failure reasons of/-F characteristics are summarized and analyzed.It is found that the main effect on DC characteristic of detector chip is surface leakage.

关 键 词：INSB 光电二极管 电流-电压特性 失效分析 

分 类 号：TG156.22[金属学及工艺—热处理]