InGaAs/InP红外雪崩光电探测器的研究现状与进展  

Recent Progress in InGaAs/InP Infrared Avalanche Photodetectors

作　　者：胡伟达[1] 李庆[1] 温洁[1] 王文娟[1] 陈效双[1] 陆卫[1] HU Weida;LI Qing;WEN Jie;WANG Wenjuan;CHEN Xiaoshuang;LU Wei(State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics of CAS,Shanghai 200083,China)

机构地区：[1]中国科学院上海技术物理研究所,红外物理国家重点实验室,上海200083

出　　处：《红外技术》2018年第3期201-208,共8页Infrared Technology

基　　金：国家杰出青年基金项目(61725505)。

摘　　要：近年来,量子卫星通信、主动成像等先进技术的应用取得了较大的进展,InGaAs/InP雪崩光电探测器作为信息接收端的核心器件起到了至关重要的作用。本文系统介绍了InGaAs/InP雪崩光电探测器的工作原理,分析了器件结构设计对暗电流特性的影响,对盖格模式下多种单光子探测电路进行了综述,同时对新型金属-绝缘体-金属结构设计的研究进展进行了介绍和展望。In recent years,quantum satellite communication and active imaging,where InGaAs/InP infrared avalanche photodetectors play a key role in single-photon detection,have progressed considerably.This review provides a detailed introduction to the basic principle of InGaAs/InP infrared avalanche photodetectors.The impact of the device structure characteristics on the dark current avalanche mechanism is summarized.Different circuits related to single-photon detection technology,running in Geiger mode,are presented.Several novel metal-insulator-metal structures are introduced for enhancing the quantum efficiency of InGaAs/InP infrared avalanche photodetectors,and their prospects are discussed.

关 键 词：InGaAs/InP红外雪崩光电探测器 暗电流机制 单光子探测 表面等离共振效应 

分 类 号：O572[理学—粒子物理与原子核物理]