Cross-sectional investigation of radiation damage of 2 MeV proton-irradiated silicon carbide  

作　　者：Xu Wang Yan-Wen Zhang Dong Han Yun-Biao Zhao Zi-Qiang Zhao Ming Zhang 

机构地区：[1]Institute of Materials, China Academy of Engineering Physics [2]Department of Nuclear Physics, China Institute of Atomic Energy [3]State Key Laboratory of Nuclear Physics and Technology,Institute of Heavy Ion Physics, School of Physics, Peking University

出　　处：《Nuclear Science and Techniques》2018年第4期72-78,共7页核技术（英文）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.11705169,91426304 and 91226202)

摘　　要：Cross-sectional investigation is an important method to study ion irradiation effects in the depth direction. In this study, 2 Me V H^+was implanted in 6 H-SiC single crystals to investigate the effects of light ion irradiation on SiC. Raman spectroscopy and scanning electronic microscopy(SEM) were carried out on crosssectional samples to reveal the in-depth damage states and dopant behavior. The most damaged region is a little shallower than that predicted by the SRIM procedure,owing to the uncertainty in SRIM simulations. Layered structures representing zones of varying damage after2 MeV H ion irradiation are clearly observed. Two bands are observed in SEM images, of which on band corresponds to the damage peak, while the other band at the end of the H ion-affected area is probably a result of H diffusion propelled by a hydrogen-rich layer during irradiation.A charge accumulation effect related with conductivity on the sample surfaces during SEM tests is observed in theH-implanted area. A model is proposed to explain these phenomena.Cross-sectional investigation is an important method to study ion irradiation effects in the depth direction. In this study, 2 Me V H^+was implanted in 6 H-SiC single crystals to investigate the effects of light ion irradiation on SiC. Raman spectroscopy and scanning electronic microscopy(SEM) were carried out on crosssectional samples to reveal the in-depth damage states and dopant behavior. The most damaged region is a little shallower than that predicted by the SRIM procedure,owing to the uncertainty in SRIM simulations. Layered structures representing zones of varying damage after2 MeV H ion irradiation are clearly observed. Two bands are observed in SEM images, of which on band corresponds to the damage peak, while the other band at the end of the H ion-affected area is probably a result of H diffusion propelled by a hydrogen-rich layer during irradiation.A charge accumulation effect related with conductivity on the sample surfaces during SEM tests is observed in theH-implanted area. A model is proposed to explain these phenomena.

关 键 词：SiC PROTON IRRADIATION CROSS-SECTIONAL analysis RAMAN spectroscopy SEM 

分 类 号：TL[核科学技术]