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作 者:Sajedeh MOHAMMADI AREF Mohammad GHAFOURI
机构地区:[1]Faculty of Physics, University of Tabriz [2]Physics Department, Shabestar Branch, Islamic Azad University
出 处:《Transactions of Nonferrous Metals Society of China》2018年第3期495-501,共7页中国有色金属学报(英文版)
摘 要:The effect of changes in sintering temperature on electrical properties and microstructure of ZnO?polyaniline?polyethylene composite ceramics,prepared in disk form at the pressure of 60 MPa and at five different temperatures,has been investigated.Increasing sintering temperature from 30 to 120°C noticeably reduces breakdown voltage from 830 to 610 V.Further increase in sintering temperature causes breakdown voltage to increase.Interface voltage barrier height behaves differently when sintering temperature increases,which is in contrast to breakdown voltage behavior.These samples have a very low leakage current,a factor which indicates low degradation.Then again,the higher the sintering temperature gets,the less the nonlinear coefficient becomes.In addition,each sample has hysteresis which decreases through increase of sintering temperature up to 120°C.Further increase in sintering temperature,however,causes the hysteresis loop to spread.Regarding UV spectra of the samples,it is revealed that there are three impurity levels whose behaviors against sintering temperature are subtractive.Analysis of composite samples by scanning electron microscopy indicates that their microstructure consists of grains and grain boundaries.Resistivity of grain boundaries is the main responsible factor for these changes in varistor characteristic as a function of sintering temperature.在60 MPa压力,5个不同的烧结温度下将Zn O-聚苯胺-聚乙烯混合粉末压制成复合陶瓷圆片,研究烧结温度的变化对其电物理性能和显微组织的影响。结果显示,烧结温度从30°C升高至120°C,击穿电压从830V降低至610 V;继续提高烧结温度,击穿电压反而升高。随着烧结温度的升高,界面电压势垒的变化与击穿电压的变化相反。样品的泄露电流很低,说明材料具有低的降解速率。烧结温度越高,非线性系数变得越小。此外,各样品均有迟滞现象,随烧结温度升高至120°C,电滞回线降低;当温度继续升高时,电滞回线变宽。紫外光谱的结果显示,有3个杂质能级,且随烧结温度的升高而降低。扫描电镜的结果显示,复合材料显微组织中含有晶粒和晶界,晶界的电阻率是影响材料的压敏特性随烧结温度变化的主要因素。
关 键 词:ZNO electrical properties sintering temperature VARISTOR COMPOSITE MICROSTRUCTURE
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