生物形态SiC陶瓷上纳米线的制备及形貌演化  

Formation and Morphology Evolution of Nanowires on Biomorphic SiC Ceramics

作　　者：姜凤阳[1] 刘江南[1,2] 王俊勃[2] 贺辛亥[2] JIANG Fengyang;LIU Jiangnan;WANG Junbo;HE Xinhai(School of Materials Science and Engineering,Northwestern Polytechnical University,Xi’an 710072,China;College of Mechanical&Electrical Engineering,Xi’an Polytechnic University,Xi’an 710048,China)

机构地区：[1]西北工业大学材料学院,西安710072 [2]西安工程大学机电学院,西安710048

出　　处：《西安工业大学学报》2018年第1期46-51,共6页Journal of Xi’an Technological University

基　　金：陕西省自然科学基金(2013JM6008);西安工程大学博士创新基金(BS1302)

摘　　要：为了研究生物形态SiC陶瓷上纳米线的形成及影响因素,揭示其形貌演化过程及生长机制.通过控制遗态转化温度和氧含量制备不同纳米线修饰的生物形态SiC陶瓷,采用扫描电子显微镜和透射电镜表征陶瓷上纳米材料的微观结构.结果表明:生物形态SiC陶瓷上制备的纳米线主要为SiC和SiO_2,并受温度及SiO饱和分压变化的影响,微量氧在纳米材料生长过程起关键作用.随合成温度升高,生物形态陶瓷上的纳米线的尺寸逐渐变大,纳米线的形貌依次为项链状、绒毛状、直棒状以及高温下的柱状晶须结构.SiO_2纳米线和无圆形尖端的SiC纳米线的生长方式均为气固机制,SiO_2纳米线的生长过程为化学气相反应沉积过程,而SiC纳米线的生长则需要孪晶及堆垛层错提供驱动力辅助生长.The paper aims to study the formation of nanowires on biomorphic SiC ceramics and its influencing factors and to investigate the morphology evolutionary process and growth mechanism of nanostructures.The biomorphic SiC ceramics with different nanowires were prepared at different temperatures and with different oxygen contents during morph genetic process.The morphologies and microstructures of nanowires were characterized by a scanning electron microscope and a transmission electron microscope.The results show that the nanowires on biomorphic SiC ceramics are SiC and SiO 2 and are associated with temperature and the SiO partial pressure,and that trace oxygen plays a vital role in the formation of nanomaterials.As the temperature rises,the diameters of SiO 2 and SiC nanowires increase gradually,and the morphologies of the nanowires,in turn,are necklace like,villiform like,rodlike and columnar whisker structure at high temperature.The growth mechanism of SiO 2 nanowires and SiC nanowires without round tips are both the vapor solid mechanism.The growth process of SiO 2 nanowires is a chemical vapor deposition process while stacking faults and twin crystals are required as a driving force to enhance the growth of SiC nanowires.

关 键 词：生物形态 SIC陶瓷 纳米线 生长机制 SIO2 

分 类 号：TG113.12[金属学及工艺—物理冶金]