一种新结构硅TPJBS二极管的器件与工艺仿真  

Device and Technology Simulations of a Novel Structure TPJBS Diode

作　　者：张海鹏[1] 程雨 齐瑞生 王彬[1] ZHANG Haipeng;CHENG Yu;QI Ruisheng;WANG Bin(School of Electronic Information,Hangzhou Dianzi University,Hangzhou Zhejiang 310018,China;Shanghai Huali Microelectronics Corporation,Shanghai 201203,China)

机构地区：[1]杭州电子科技大学电子信息学院,浙江杭州310018 [2]上海华力微电子有限公司,上海201203

出　　处：《杭州电子科技大学学报（自然科学版）》2018年第1期7-11,74,共6页Journal of Hangzhou Dianzi University：Natural Sciences

基　　金：浙江智慧城市区域协作中心开放基金资助项目;浙江省科技计划资助项目(2009C31004)

摘　　要：为了满足电子与电气系统中较高反压快恢复二极管的应用需求,提出了一种硅沟槽P型结势垒肖特基复合二极管(TPJBS)新结构。对该TPJBS的正向导通特性和反向击穿特性进行了仿真试验、测试与优化,结果表明,与传统肖特基快恢复二极管(SBD)相比,经过优化的TPJBS器件的通态电流、导通电阻、通态压降等特性均有明显改善。其中,其反向泄漏电流密度降低了5~7个数量级,击穿电压则提高1倍多,更适用于需要较高反压快速恢复二极管的电子与电气系统的应用。为了验证该TPJBS的可制造性,采用半导体器件与工艺仿真软件TCAD对该TPJBS进行虚拟制造,结果表明,在目前的超薄片功率半导体工艺条件下,经过优化的TPJBS器件具有一定的可制造性。In order to meet the application requirement on fast recovery diode with higher block voltage than that of conventional SBD in electronic and electrical systems,a novel trenched P-type silicon complex junction barrier Schottky diode(TPJBS)was proposed.A software of virtual semiconductor foundry-TCAD was adopted for device simulation experiments on its forward conduction and reverse breakdown characteristics,experimental results indicate that its on-state current density,on-state resistivity,on-state voltage drop were all improved obviously and its reverse leakage current density and breakdown voltage were much improve especially than those of corresponding SBD.Therefore,the proposed TPJBS is more suitable for electronic and electrical system applications witch desire fast recovery diode with higher block voltage.To evaluate the manufacturability of the proposed TPJBS,further process simulation was conducted and the virtual sample of the proposed TPJBS was fabricated,which demonstrated its full compatibility with the current power device technologies on super-thin wafer.

关 键 词：TPJBS 功率器件 电学特性 

分 类 号：TN386[电子电信—物理电子学]