二极管反向击穿引发的主变保护误动分析  

Misoperation Analysis of Main Transformer Protection Caused by Diode Reverse Breakdown

作　　者：丁超前 汪晓彤 DING Chao-qian;WANG Xiao-tong(State Grid Hefei Power Supply Company,Hefei 230022,China)

机构地区：[1]国网合肥供电公司,安徽合肥230022

出　　处：《安徽电气工程职业技术学院学报》2018年第1期41-43,共3页Journal of Anhui Electrical Engineering Professional Technique College

摘　　要：2017年7月22日,110k V某变电站发生110k V#2主变低压侧过流保护误动跳闸。发生该次事故后,该公司继电保护班组专业人员会同厂家技术人员立即进行试验和分析,发现导致本次事故的原因是低压侧后备保护CPU板中的一个二极管被击穿。On July 22,2017,a misoperation tripping accident of overcurrent protection for#2 main transformer low-voltage side occurred in a 110kV Substation.After the accident,the relay protection team of the company carried out a test and analysis with the technical personnel of the manufacturer immediately,and found that the cause of the accident was the breakdown of a diode on the CPU board of the low-voltage side reserve protection.

关 键 词：低压侧 CPU板 二极管 击穿 分段开关 

分 类 号：TM774[电气工程—电力系统及自动化]