退火温度对Nb掺杂TiO_2薄膜结构与性能的影响  

Influence of Annealing Temperature on Structure and Properties of Nb-doped TiO_2 Thin Films

作　　者：苏雷生 林钰[2] 董林[1] 辛荣生[1] SU Leisheng;LIN Yu;DONG Lin;XIN Rongsheng(Schoolof Material Science and Engineering,Zhengzhou University,Zhengzhou450001,China;Department of Chemistry,Henan Education Institute,Zhengzhou 450014,China)

机构地区：[1]郑州大学材料科学与工程学院,河南郑州450001 [2]河南教育学院化学系,河南郑州450014

出　　处：《郑州大学学报（工学版）》2018年第2期86-91,共6页Journal of Zhengzhou University（Engineering Science）

基　　金：国家自然科学基金资助项目(11674290);河南省科技厅科技攻关资助项目(142102210068)

摘　　要：采用磁控溅射法在玻璃衬底上制备了Nb掺杂TiO_2透明导电薄膜,通过X射线衍射(XRD)、原子力显微镜(AFM)、紫外可见光谱(UV-Vis)及双电测四探针仪对薄膜的结构和性能进行了表征.结果表明:退火温度250℃以上时,得到锐钛矿相Nb掺杂TiO_2薄膜,且薄膜结构和光电性能随温度升高而改善;300℃时薄膜可见光透过率最高可达80%,电阻率降至2.5×10-3Ω·cm;当温度升至350℃时,薄膜晶体开始出现金红石相,光电性能也随之下降.另外,Nb掺杂有利于降低TiO_2薄膜晶体的晶相转变温度;掺杂后TiO_2薄膜的吸收限发生蓝移现象,并且随着退火温度改变,薄膜吸收限产生蓝移的程度有所不同.Nb-doped TiO 2transparent conductive thin films were prepared on Glass substrates by magnetron sputtering method.The structure and the properties of the films were characterized by using X-ray diffraction(XRD),atomic force microscope(AFM),UV-Vis spectroscopy and four probe resistance tester.The results showed that the anatase phase Nb-doped TiO 2 thin films were obtained when the annealing temperature above 250℃,also the structure and the photoelectricl properties were improved with the temperature increased.The best visible light transmissivity reached to 80%and resistivity droped to 2.5×10-3Ω·cm when temperature at 300℃.As the annealing temperature were risen to 350℃,the films began to appear rutile phase,then the photoelectric properties were decreased.Moreover Nb doping was beneficial to reduce the crystal phase transformation temperature of the TiO 2 thin film.The Nb-doped TiO 2 thin film absorption edge also produced blue shift,and the blue shift degree of the thin films absorption edge was different with the change of annealing temperatures.

关 键 词：温度 Nb掺杂 TO2薄膜 结构 光电性能 

分 类 号：TN304.055[电子电信—物理电子学]