检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:张哲铭 薄报学 张晓磊 顾华欣 刘力宁 徐雨萌 乔忠良 高欣 ZHANG Zhe-ming;BO Bao-xue;ZHANG Xiao-lei;GU Hua-xin;LIU Li-ning;XU Yu-meng;QIAO Zhong-liang;GAO Xin(State Key Laboratory of High Power Semiconductor Laser,Changchun University of Science and Technology,Changchun 130022,China)
机构地区:[1]长春理工大学,高功率半导体激光国家重点实验室,吉林长春130022
出 处:《发光学报》2018年第3期343-348,共6页Chinese Journal of Luminescence
基 金:国家重点研发计划(SQ2017YFGX020046);国家自然科学基金(61176048,61177019,61308051);吉林省科技发展计划(20150203007GX,20160203017GX,20170101047JC,20170203014GX)资助项目
摘 要:为了快捷而有效地检测半导体激光器的封装应力,设计了一种通过检测激光器巴条各个单元偏振度揭示出其封装应力分布的实验方法。实验测试半导体激光器巴条的各项参数,并利用有限元软件模拟,通过半导体能带与应力理论,说明偏振度与封装应力的影响关系。实验表明,巴条个别发光单元的偏振度较低、阈值电流较高是由于封装应力较大。通过计算,封装应力为141.92 MPa,偏振等效应力最大为26.73 MPa。实验器件在阈值以下的偏振度较好地反映了封装应力的分布趋势。利用阈值电流以下测量器件偏振度,可以为选择热沉及焊料材料、焊接工艺参数的改进等方面提供一个较为快捷而有效的检测方法。In order to detect the packaging induced stress of semiconductor lasers quickly and effectively,an experimental device which can reveal the encapsulation stress by detecting the polarization degree of each unit of laser bar was designed.The parameters of the semiconductor laser bar were experimentally tested and the finite element software was used to simulate the relationship between the degree of polarization and the packaging induced stress through the theory of the semiconductor energy band and stress.The experiment results show that the individual light-emitting unit of the bar is less polarized,the higher threshold current is due to the larger packaging stress.Through the calculation,the packing stress is 141.92 MPa,and the polarization equivalent stress is 26.73 MPa.The degree of polarization of the device below the threshold reflects the distribution trend of the packaging induced stress,and the degree of polarization of the device can be measured by using the following threshold current.It can provide a quicker and more efficient method for selecting the heat sink and the solder material and the improvement of the welding process parameters.
分 类 号:TN248.4[电子电信—物理电子学]
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.3