Se超薄层钝化Si(100)表面与金属Al、Pt的接触特性  

The Properties of the Al and Pt Contacted with Si (100) Surface Passivated by Se Ultrathin Film

作　　者：潘书万 庄琼云[2] 郑力新 PAN Shuwan;ZHUANG Qiongyun;ZHENG Lixin(College of Engineering,Huaqiao University,Quanzhou 362021%China;College of Information and Electronic Engineering,Liming Vocational University,Quanzhou 362000,China)

机构地区：[1]华侨大学工学院,福建泉州362021 [2]黎明职业大学信息与电子工程学院,福建泉州362000

出　　处：《黎明职业大学学报》2018年第1期86-90,96,共6页Journal of LiMing Vocational University

基　　金：福建省自然科学基金面上项目(2015J01655);福建省教育厅基金项目(A类)(JA14025,JA13429);华侨大学科研基金资助项目(12BS226)

摘　　要：采用超高真空气相沉积系统外延硒(Se)超薄层钝化Si(100)表面,研究其与金属铝(Al)、铂(Pt)的接触特性。对于Al与Se钝化后的Si接触样品,其肖特基势垒高度(SBH)值为0.2 e V,相比于HF处理的样品,SBH降低了一半;随着退火温度从200℃升至500℃,SBH值逐渐升高至HF处理的样品的SBH值。而对Pt与Se钝化的Si接触样品,未退火时电流电压特性基本与HF处理的样品一致,然而快速热退火后,Se钝化的样品基本保持不变,而HF处理的样品反向偏置电流迅速增大。通过拟合金半接触SBH与金属功函数的关系,得到线性关系的斜率为S=0.41,说明硒超薄层可以降低Si(100)表面与金属接触费米钉扎效应。The ultrathin film of Selenium(Se)was fabricated by ultrahigh vacuum chemical vapor deposition for the passivation of the Si(100)surface.Compare to the Al/H/nSi contact sample,the SBH value of Al/Se/nSi contact sample decreased from 0.45eV to 0.2 eV.For Pt/Se/nSi contact sample,the current-voltage characteristic remained almost unchanged as the annealing temperature increased from 200 oC to 500 oC.Conversely,the reverse bias current of the Pt/H/nSi contact sample badly changed with the increase of the annealing temperature.Finally,it is found that the SBH value of contact between Se layer and metal is related to the work function of the metal with a Pinning factor of 0.41.The results indicated that the Se ultrathin layer reduces the fermi Pinning effect.

关 键 词：金半接触 硒 钝化 肖特基势垒高度 

分 类 号：TN305.2[电子电信—物理电子学]