NiO为空穴传输层的量子点发光二极管及其性能  

Properties of Quantum Dot Light Emitting Diode Using NiO as Hole Transport Layer

作　　者：郭起玲 李景灵 何新华[1] 徐雪青[2] GUO Qi-ling;LI Jing-ling;HE Xin-hua;XU Xue-qing(School of Materials Science and Engineering,South China University of Technology,Guangzhou 510641,China;Key Laboratory of Renewable Energy,Guangzhou Institute of Energy Conversion,Chinese Academy of Sciences,Guangzhou 510640,China)

机构地区：[1]华南理工大学材料科学与工程学院,广州510641 [2]中国科学院广州能源研究所中国科学院可再生能源重点实验室,广州510640

出　　处：《人工晶体学报》2018年第3期556-563,共8页Journal of Synthetic Crystals

基　　金：广州市协同创新重大专项(201704030069)

摘　　要：采用溶液法制备NiO纳米晶,利用XRD、TEM、UPS表征样品并将其应用于结构为ITO/NiO/PVK/QDs/Zn O/Ag的量子点发光二极管(QLED)中。XPS测试表明紫外臭氧处理可诱导NiO晶格内部产生Ni3+离子,通过引入多次旋涂和多次紫外臭氧处理相结合的工艺,获得Ni3+离子含量增多且分布均匀的NiO薄膜。研究结果显示:随着旋涂NiO次数的增加,器件性能呈现出逐渐改善趋势,当旋涂4次时,器件获得最佳效果,其中最佳发光强度从184cd/m2提高到4775 cd/m2,最大电流效率为0.54 cd/A,最大外量子效率为0.22%,与未改善的单层NiO基QLED相比,均提高超过50倍。NiO nanocrystals were prepared using solution method,then characterized by XRD,TEM and UPS,respectively,and finally applied to QLED with the structure of ITO/NiO/PVK/QDs/ZnO/Ag.XPS results reveal that Ni3+will occur within NiO crystal lattice via UV-ozone treatment,and uniformly distributed NiO films with increasing Ni3+concentration are obtained by means of the multiple processes combining spin coatings with UV-ozone treatment.The results indicate that the performance of the device shows a trend of gradual improvement with the increase of the number of NiO spin coating.When the number of spin coating is 4,the obtained device exhibits the best performance,i.e.,the luminous intensity increases from 184 cd/m2 to 4775 cd/m2,along with the maximal current efficiency of 0.54 cd/A and the maximal external quantum efficiency of 0.22%.Such efficiencies values are enhanced by over 50 times compared with those for QLED with single NiO layer.

关 键 词：氧化镍 溶液法 空穴传输层 量子点发光二极管 

分 类 号：O482.31[理学—固体物理] TN383.1[理学—物理]