热蒸发制备CdSe薄膜的退火工艺研究  

Study on Annealing Technique for CdSe Thin Film Prepared by Vacuum Thermal Evaporation

作　　者：裴传奇 张志勇[2] 张敏 杨辉 刘其娅 曾体贤 PEI Chuanqi;ZHANG Zhiyong;ZHANG Min;YANG Hui;LIU Qiya;ZENG Tixian(College of Physics and Space Science,China West Normal University,Nanchong 637002;National Astronomical Observatories,The Chinese Academy of Sciences,Beijing 100012)

机构地区：[1]西华师范大学物理与空间科学学院,南充637002 [2]中国科学院国家天文台,北京100012

出　　处：《材料导报》2017年第A01期242-245,共4页Materials Reports

基　　金：四川省科技厅应用基础项目(2014JY0133);中国科学院太阳活动重点实验室开放课题(KLSA201514)

摘　　要：采用真空热蒸发技术在光学玻璃基底上制备了CdSe薄膜,研究了真空下不同退火温度和退火时间对CdSe薄膜晶体结构和表面形貌的影响。XRD结果表明,在400~500℃范围下退火2h、5h的CdSe薄膜晶型不发生改变,结晶性随退火温度升高而增强,其晶粒尺寸从32nm增加至50nm。SEM结果表明,在450℃下退火2h后的CdSe薄膜表面颗粒分布均匀且排列规则、无裂纹。AFM结果表明,在450℃下退火2h后的CdSe薄膜致密性好,表面粗糙度低(5.19nm)。因此采用真空热蒸发制备的CdSe薄膜的热处理条件确定为:退火温度450℃,退火时间2h。CdSe thin films were prepared on glass substrates by the vacuum thermal evaporation.The CdSe fims were annealed in a vacuum for 2 h and 5 h,the annealing temperatures are 400℃,450℃,500℃and 600℃.Under the condition of the vacuum,effects of the different annealing temperatures and times on the crystal structure and surface morphology of CdSe films were studied.The X-ray diffraction(XRD)results demonstrate,with the anneal at 400℃to 500℃for 2 h,5 h of CdSe film crystal type is not changed.The crystalline of the films enhanced with the increase of annealing temperature and the grain size increased to 50 nm from 32 nm.Scanning electron microscope(SEM)results shows,for the CdSe thin film annealed at 450℃for 2 h,the surface grain is in uniform and regular arrangement without crack.Atomic force microscope(AFM)results shows,for the CdSe thin film annealed at 450℃for 2 h,the surface has good densification and a low surface roughness which equals 5.19 nm.For CdSe film by thermal evaporation,the ideal heat treatment conditions are that the annealing temperature is 450℃and annealing time is 2 h.

关 键 词：热蒸发 CDSE薄膜 退火温度 退火时间 

分 类 号：O469[理学—凝聚态物理]