空间用GaInP/GaAs/Ge三结太阳电池的抗辐照性能及退化机制研究  

Radiation Resistance and Degradation Mechanism of Space GaInP/GaAs/Ge Triple-junction Solar Cell

作　　者：马大燕[1] 陈诺夫[1] 陶泉丽 赵宏宇 刘虎[1,3] 白一鸣 陈吉堃[4] MA Dayan;CHEN Nuofu;TAO Quanli;ZHAO Hongyu;LIU Hu;BAI Yiming;CHEN Jikun(School of Renewable Energy Sources,North China Electric Power University,Beijing 102206;Beijing Guowang Fuda Science and Technology Development Co.,Ltd.,Beijing 100070;Department of Mathematics and Physics,Shijizhuang Tiedao University,Shijiazhuang 050041;School of Materials Science and Engineering,University of Science and Technology Beijing,Beijing 100083)

机构地区：[1]华北电力大学可再生能源学院,北京102206 [2]北京国网富达科技发展有限责任公司,北京100070 [3]石家庄铁道大学数理系,石家庄050041 [4]北京科技大学材料科学与工程学院,北京100083

出　　处：《材料导报》2017年第A02期12-16,共5页Materials Reports

基　　金：国家自然科学基金(61006050;61076051);中央高校基本科研业务费专项资金(13ZD05);北京市自然科学基金(2151004)

摘　　要：利用TFC光学膜系设计软件,设计出空间用GaInP/(In)GaAs/Ge三结太阳电池的分布式布拉格反射器(DBR)。由15对Al0.2Ga0.8As/Al0.9Ga0.1As组成的布拉格反射器在中心波长850 nm处反射率高达96%,可以使800~900 nm波段内红外光有效反射后被二次吸收,提高了Ga As子电池的抗辐照能力。通过对两种电池结构A、B地面模拟辐照试验获得1 Me V电子辐照下Ga In P/Ga As/Ge太阳电池电学参数随辐照注量退化的基本规律。在此基础上应用PC1D模拟程序分析太阳电池内部的载流子输运机理,建立1 Me V电子辐照下两种电池结构中多数载流子浓度和少数载流子扩散长度随辐照电子注量变化的基本规律。研究结果表明,多数载流子浓度和少数载流子扩散长度均随入射电子注量的增大而减小,同时原电池结构A中多数载流子去除率和少数载流子扩散长度损伤系数明显高于新电池结构B,由此表明包含布拉格反射器的新电池结构具有更强的抗辐照能力。The distributed Bragg reflector(DBR)for space GaInP/(In)GaAs/Ge triple-junction solar cell is designed based on the TFCalc optical film design software.The reflectivity of 15 pairs of Al 0.2 Ga 0.8 As/Al 0.9 Ga 0.1 As DBR is as high as 96%in the center wavelength of 850 nm.The light in the spectral range of 800-900 nm is reflected then absorbed twice,which enhances the anti-radiation ability of the middle subcell.The basic laws of spectral response,open-circuit voltage and short circuit current of GaInP/GaAs/Ge solar cells are obtained by ground simulation irradiation test of 1 MeV electron to the two structures.The carrier transport mechanism in cells is analyzed using the PC1D simulation program,and the variations of the majority carrier concentration and the minority carrier diffusion length with the irradiation particle fluence are obtained of 1 MeV electron irradiation.The results showed that majority carrier concentration and minority carrier diffusion length decrease with increasing the incident electron fluence.The majority carrier removal rate and the damage coefficient of minority carrier diffusion length of the original structure are higher than the new structure,which indicates that the new solar cell structure containing the Bragg reflector has a stronger resistance to radiation.

关 键 词：布拉格反射器 抗辐照 PC1D 多数载流子浓度 少数载流子扩散长度 

分 类 号：TM914.4[电气工程—电力电子与电力传动] O439[机械工程—光学工程]