SiCp/Al复合材料在Cl^-环境中的点蚀行为  

Pitting Corrosion Behavior of SiCp/Al Composites in Cl^- Containing Solution

作　　者：崔霞[1,2] 周贤良[1,2] 欧阳德来[1] 宋龙飞[1] CUI Xia;ZHOU Xianliang;OUYANG Delai;SONG Longfei(School of Materials Science and Engineering,Nanchang Hangkong University,Nanchang 330063;School of Materials Science and Technology,Nanjing University of Aeronautics and Astronautics,Nanjing 210016)

机构地区：[1]南昌航空大学材料科学与工程学院,南昌330063 [2]南京航空航天大学材料科学与技术学院,南京210016

出　　处：《材料导报》2017年第A02期372-375,共4页Materials Reports

基　　金：国家自然科学基金(51761029);江西省自然科学基金(20161BAB206108);江西省教育厅科技技术项目(GJJ160683)

摘　　要：通过浸泡模拟实验方法,研究了SiCp/Al复合材料在Cl-环境中的点蚀行为。结果表明,SiCp/Al复合材料点蚀主要出现在SiC颗粒附近,SiC与Al基体界面结合处为点蚀的优先发生位置。Cl-和界面反应物对点蚀的形成和发展起主要促进作用。Nyquist曲线在0~3 d时由容抗弧组成,Bode曲线在0.1~10 000 Hz出现高频相角峰,点蚀腐蚀过程机制表现为单纯电荷传递过程机制。3 d后Nyquist曲线出现一个高频区的容抗弧和低频区的一条与实轴成45°的直线(经典Warburg阻抗),Bode曲线在0.1~10000 Hz出现高频相角峰并在0.001~0.1 Hz出现一个不太明显的低频相角峰,点蚀腐蚀过程机制表现为电荷传递过程与腐蚀产物扩散共同作用的混合机制。The pitting corrosion behaviors and electrochemical laws of SiCp/Al composites in 3.5wt%NaCl aqueous solution were investigated by using immersion test.The results show that the pitting corrosion attack occurred preferentially at the interface between SiC particles and Al matrix of SiCp/Al composites in Cl-containing solution.Cl-and interfacial phase contribute to the development of pitting corrosion.At the immersion time of 0-3 d,Nyquist curves consist of a unique capacitance arcs,and Bode curves display a high frequency peak of phase at 0.1-10 000 Hz,which reveals the pitting corrosion mechanism of charge transport.After 3 d immersion,Nyquist curves consist of a capacitance arcs type and Warburg type impedance,and Bode curves appear a high frequency peak of phase at 0.1-10 000 Hz and a low and high frequency peaks of phase at 0.001-0.1 Hz,which reveals the pitting corrosion mechanism which involves of both charge transport and corrosion product diffusion.

关 键 词：点蚀 电化学阻抗 Cl-环境 机制 SICP/AL复合材料 

分 类 号：TB331[一般工业技术—材料科学与工程]