二氧化钒薄膜材料相变临界场强调控方法研究  

Critical Field Intensity Control for Metal-insulator Transition of Vanadium Dioxide Thin Film:a Methodological Study

作　　者：山世浩 王庆国[1] 曲兆明[1] 成伟[1] 李昂[1] SHAN Shihao;WANG Qingguo;QU Zhaoming;CHENG Wei;LI Ang(Institute of Electrostatic&Electromagnetic Protection,Ordnance Engineering College,Shijiazhuang 050003)

机构地区：[1]军械工程学院静电与电磁防护研究所,石家庄050003

出　　处：《材料导报》2018年第6期870-873,共4页Materials Reports

基　　金：国家自然科学基金(51277180)

摘　　要：采用无机溶胶-凝胶法并结合真空退火工艺在Al_2O_3陶瓷基片上制备了二氧化钒及其他价态钒氧化物共存的薄膜材料。研究了退火时间对VO_2、V_2O_5、V_6O_(13)、V_6O_(11)等价态成分和含量的影响以及对薄膜的相变临界温度和相变临界电场强度的影响。实验采用的退火时间分别为10h、8h及6h,得到的薄膜的相变临界电场强度分别为1.8 MV/m、0.8 MV/m及0.4 MV/m,相变场强降低75%以上,且随着电场强度相变点的降低,薄膜材料相变点前后电阻变化倍数也降低,但相变临界温度没有明显变化。研究结果表明:通过控制真空退火时间能够实现对电场强度相变点的有效调控,利用该方法可以研制不同相变临界场强的薄膜材料,以适应不同电磁环境的防护应用要求。The vanadium dioxide and other valence vanadium oxides were grown on Al 2O 3 ceramic substrate by the inorganic sol-gel method and vacuum annealing process.The effects of annealing time on the equivalent composition and content of VO 2,V 2O 5,V 6O 13 and V 6O 11 were studied,and the critical temperature of metal-insulator transition(MIT)and the electric field(E)MIT of the vanadium dioxide thin film were both studied.In the experiment,when the annealing time was 10 h,8 h and 6 h,the E MIT was 1.8 MV/m,0.8 MV/m and 0.4 MV/m,and the E MIT decreased over 75%,from 6 h to 10 h.At the same time,the resis-tance change multiple of metal-insulator transition of the thin film decreased with the decrease of the E MIT,but the critical temperature of MIT did not change significantly.In this paper,it was shown that the effective control of the E MIT could be achieved by controlling the vacuum annealing time,and the method could be used to develop thin film materials with different E MIT to meet the protection requirements of different electromagnetic environments.

关 键 词：无机溶胶-凝胶法 二氧化钒薄膜 真空退火 相变临界场强 

分 类 号：O484.4[理学—固体物理]