两类典型的低温应用红外探测材料研究  

Research on the Two Typical Infrared Detection Materials Serving at Low Temperatures:a Review

作　　者：罗炳威 刘大博[1] 罗飞[1] 田野[1] 陈冬生 周海涛 LUO Bingwei;LIU Dabo;LUO Fei;TIAN Ye;CHEN Dongsheng;ZHOU Haitao(Beijing Institute of Aeronautical Materials,Beijing 100095)

机构地区：[1]北京航空材料研究院,北京100095

出　　处：《材料导报》2018年第3期398-404,共7页Materials Reports

基　　金：国家自然科学基金(51602299;51302255)

摘　　要：红外探测器件是现代军用武器装备目标识别的核心构件,而红外探测材料的性能将直接影响器件的性能水平。综述了两类典型的低温应用红外探测材料研究进展,以红外探测材料研究和应用的尺度为分类标准,分别对微米尺度的窄带隙直接半导体碲镉汞和基于量子效应的四种低维材料进行了介绍,并指出了当前红外探测材料研究存在的问题和发展的方向。Infrared detector device is the core parts of the modern military weapons target recognition,and the performance of the infrared detection material will directly decide the performance of the device level.The research progress of two typical materials of infrared detection applied under low temperature is reviewed.Based on the classification standard of the scale of the infrared material,the direct semiconductor of HgCdTe with narrow bandgap and the infrared material based on the quantum effects are both introduced.Meanwhile,the current problems existing in the research of infrared detection materials and the future development direction are proposed as well.

关 键 词：碲镉汞 红外探测 低温 

分 类 号：TB332[一般工业技术—材料科学与工程]