单层二硫化钼的力学性能及缺陷工程研究进展  

Progress in Mechanical Properties and Defect Engineering of Single Layer Molybdenum Disulfide

作　　者：涂莉萍 李明林[1,2] 万亚玲 王卫东[3] TU Liping;LI Minglin;WAN Yaling;WANG Weidong(School of Mechanical Engineering and Automation,Fuzhou University,Fuzhou 350116,China;Fujian Collaborative Innovation Center of High-End Manufacturing Equipment,Fuzhou 350116,China;College of Mechanical and Electrical Engineering,Xi'an University of Electronic Science and Technology,Xi'an 710071,China)

机构地区：[1]福州大学机械工程及自动化学院,福建福州350116 [2]福建省高端装备制造协同创新中心,福建福州350116 [3]西安电子科技大学机电工程学院,陕西西安710071

出　　处：《机械制造与自动化》2018年第2期48-53,共6页Machine Building & Automation

基　　金：国家自然科学基金青年基金项目(50903017;51205302)

摘　　要：单层二硫化钼(SLMoS_2)是类似石墨烯的准二维蜂窝晶格层状纳米材料。相较于半导体性石墨烯在制备上的复杂性,具有直接带隙半导体特性的SLMoS_2被认为更具优势,是取代传统硅半导体的新一代候选材料之一。介绍了SLMoS_2优异的物理化学特性及其力学性能的近期研究进展、SLMoS_2在制备和表征过程中存在的固有缺陷类型和晶界,以及近年来基于理论和实验方法所揭示的缺陷和晶界对其物理化学性能的影响,并对其缺陷工程的若干研究领域提出了展望。Single-layer molybdenum disulfide(SLMoS 2)is analogous to a graphene layered nanomaterial with pseudo two-dimensional honeycomb lattice structure.Compared with the complexity of obtaining the semiconducting graphene,the semiconductor material SLMoS 2 is considered to be more superior due to its direct bandgap,and is believed to be one of candidates for the next generation semiconductor material to replace the traditional silicon.This paper briefly summarizes the progress in the study of the outstanding physical,chemical and mechanical properties,introduces the inherent structure defects and grain boundaries of SLMoS 2 induced in the procedures of fabrication and characterization and overviews the effect of the defects and grain boundaries appearing in the theoritical and experimental research methods on the physical and chemical properties,then,proposes several promising research fields related to the defect engineering of SLMoS 2.

关 键 词：二维纳米材料 二硫化钼 缺陷工程 力学性能 

分 类 号：TB301[一般工业技术—材料科学与工程]