温度对a-Si:H/c-Si异质结太阳能电池光伏特性的影响  

Effects of Temperature on the Photovoltaic Properties of a-Si:H/c-Si Heterojunction Solar Cells

作　　者：曾喆方竹 钟春良[1] 隆雪燕 佘宏伟 杨迪武[1] ZENG Zhefangzhu;ZHONG Chunliang;LONG Xueyan;SHE Hongwei;YANG Diwu(College of Science,Hunan University of Technology,Zhuzhou Hunan 412007,China)

机构地区：[1]湖南工业大学理学院,湖南株洲412007

出　　处：《湖南工业大学学报》2018年第2期43-48,共6页Journal of Hunan University of Technology

基　　金：国家自然科学基金资助项目(11374094);湖南工业大学研究性学习和创新性实验计划基金资助项目(201611535008);湖南省自然科学基金资助项目(2015JJ3060);湖南省教育厅基金资助项目(17C0470)

摘　　要：运用开路电压解析模型和AMPS模拟分析温度对a-Si:H/c-Si异质结太阳能电池性能的影响及其机理。随着温度T的升高,热电压增大,开路电压V_(OC)减小。当T<270 K时,填充因子FF迅速增加;当T≥270 K时,FF保持不变,a-Si:H/c-Si异质结太阳能电池的转化效率在T=270 K取得最佳值。低温工作时,空穴输运受到价带补偿界面势垒的限制,J-V曲线出现S-Shape现象,填充因子FF显著降低。By using the open circuit voltage analytical model and AMPS,a simulation analysis has been made of the effects of temperature on the properties of a-Si:H/c-Si heterojunction solar cells and its mechanism.The increase of temperature T leads to an increase in the thermal voltage and a decrease in the open-circuit voltage.The fill factor FF increases drastically when T<270 K while remains unchanged when T≥270 K,with the highest conversion efficiency of a-Si:H/c-Si heterojunction solar cells obtained when T=270 K.When at work under a low temperature,the quantum transport is restricted by the barrier of valence band compensation interface,with S-Shape phenomenon occurring in J-V,thus significantly reducing the filling factor FF.

关 键 词：太阳能电池 a-Si:H/c-Si异质结 温度 转换效率 

分 类 号：TM914[电气工程—电力电子与电力传动]