快速光热退火制备硅基锗薄膜的机理研究  

Study on the mechanism of preparation of silicon based germanium thin films by rapid thermal

作　　者：王从杰[1] 陈诺夫[1] 魏立帅[1] 陶泉丽 贺凯[1] 张航 白一鸣[1] 陈吉堃[2] WANG Congjie;CHEN Nuofu;WEI Lishuai;TAO Quanli;HE Kai;ZHANG Hang;BAI Yiming;CHEN Jikun(School of Renewable Energy,North China Electric Power University,Beijing 102206,China;School of Materials Science and Engineering,University of Science and Technology Beijing,Beijing 100083,China)

机构地区：[1]华北电力大学可再生能源学院,北京102206 [2]北京科技大学材料学院,北京100083

出　　处：《功能材料》2018年第4期4179-4183,共5页Journal of Functional Materials

基　　金：北京市自然科学基金资助项目(2151004);中央高校基本科研业务费专项资金资助项目(2016MS50)

摘　　要：采用磁控溅射技术首先在单晶硅衬底上溅射石墨缓冲层,然后在石墨层上溅射沉积Ge薄膜。采用快速光热退火和常规热退火对Ge薄膜后续处理。通过X射线衍射及Raman光谱测试,研究不同退火条件下薄膜的晶化情况,揭示了光子在薄膜晶化中的作用。研究表明,光量子效应对锗薄膜晶化既有晶化作用,也有退晶化作用。The Ge films were deposited on the monocrystalline silicon substrate covered with graphite buffer layer by magnetron sputtering equipment,and then treated by rapid thermal annealing and conventional thermal annealing.The crystallization of the films under different annealing conditions were investigated by X-ray diffraction and Raman spectroscopy,and the effect of photons in the crystallization of the films was revealed.The results show that the photon quantum effect has both positive and negative effects on crystallization of germanium films.

关 键 词：硅基锗薄膜 常规热退火 快速光热退火 光量子效应 

分 类 号：TN304.12[电子电信—物理电子学] TM914.4[电气工程—电力电子与电力传动]