锗酸铋电光晶体的半波电压调控  被引量:2

Regulation of bismuth germanate electro-optic crystal′s half-wave voltage

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作  者:谢楠[1] 邱鑫茂 徐启峰[1] 谭巧[1] 马靖[2] Xie Nan;Qiu Xinmao;Xu Qifeng;Tan Qiao;Ma Jing(College of Electric Engineering and Automation,Fuzhou University,Fuzhou 350108,China;College of Physics and Information Engineering,Fuzhou University,Fuzhou 350108,China)

机构地区:[1]福州大学电气工程与自动化学院,福建福州350108 [2]福州大学物理与信息工程学院,福建福州350108

出  处:《红外与激光工程》2018年第4期267-272,共6页Infrared and Laser Engineering

基  金:福建省中青年教师教育科研项目(JA15060);福建省科技厅引导性项目(2017H0013)

摘  要:提出了一种通过改变晶体切割方向,调控和提高锗酸铋晶体半波电压的方法,可以显著扩大光学电压传感器的测量范围。使用电光效应耦合波理论,分析了半波电压对晶体切割方向的依赖关系。晶体切割方向决定了锗酸铋晶体的通光方向和电场方向。分析结果表明,当晶体沿[-2^(-0.5),2^(-0.5),0]和[0.219,0.219,0.951]方向切割时,可使半波电压提高为标准切割方向的5倍;当晶体沿[0.140,0.275,0.951]和[2^(-0.5),2^(-0.5),0]方向切割时,半波电压可提高至12倍。讨论了光传播方向对半波电压的影响,锗酸铋晶体采用标准切割方向,光路角度偏移在±0.05π范围内时,半波电压的变化量小于0.06%。该半波电压调控方法同样适用于其它电光晶体。To increase the measurement range of optical voltage sensor,a method for regulating and increasing the half-wave voltage of bismuth germanate crystal by varying the cutting direction was proposed.With the electro-optic wave coupling theory,the dependence of half-wave voltage on crystal cutting direction was investigated.The light propagation direction and the electrical field direction of bismuth germanate crystal were determined by the crystal cutting directions.The results demonstrate that the half-wave voltage is increased to 5 times when crystal is cut along direction[-2-0.5,2-0.5,0]and[0.219,0.219,0.951].And the half-wave voltage is increased to 12 times when crystal is cut along direction[0.140,0.275,0.951]and[2-0.5,2-0.5,0].The influence of light propagation direction on half-wave voltage was also discussed.When bismuth germanate crystal is cut along the standard direction,the variation of half wave voltage is less than 0.06%with angle error of light propagation in the range of±0.05π.This method of half-wave voltage regulation is also suitable for other electro-optic crystals.

关 键 词:半波电压 锗酸铋 切割方向 耦合波理论 

分 类 号:TN204[电子电信—物理电子学]

 

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