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作 者:李玉瑶[1] 张婉怡[1] 刘喆[1] 李美萱[1] 付秀华[1,2] LI Yuyao;ZHANG Wanyi;LIU Zhe;LI Meixuan;FU Xiuhua(College of Optical and Electronical Information Changchun University of Science and Technology,Changchun 130012,China;College of Opto-electronics Engineering,Changchun University of Science and Technology,Changchun 130022,China)
机构地区:[1]长春理工大学光电信息学院,长春130012 [2]长春理工大学光电工程学院,长春130022
出 处:《激光技术》2018年第1期39-42,共4页Laser Technology
基 金:吉林省科技支撑计划资助项目(20150204047GX);吉林省教育厅"十三五"科学技术研究资助项目(2015578)
摘 要:为了研究薄膜激光损伤机理及影响因素,基于平顶光束辐照测量的原理,采用1064nm的Nd∶YAG激光器,对电子束热蒸发方式镀制的Hf O2薄膜在重复频率激光作用下损伤的累积效应进行了理论分析和实验验证。运用损伤阈值的测量原理,分析了1-on-1和S-on-1两种测量方式的特点,并分别开展了测量实验。采用二分法查找辐照激光能量,每个能量密度辐照20个测试点,应用零几率损伤阈值和最小二乘法拟合确定测量结果。结果表明,对同种薄膜,1-on-1测量方式测得的损伤阈值为15.75J/cm^2,S-on-1测量方式测得的损伤阈值为11.90J/cm^2;从损伤阈值与损伤形貌两方面的对比表明,S-on-1测量方式体现了典型的累积效应。此结果对深入研究薄膜激光损伤的机理和影响因素具有重要意义。In order to study the damage mechanism and influencing factors of laser thin films,the principle of radiation measurement based on flat top beam was proposed.The cumulative damage effect of HfO 2 films processed by electron beam thermal evaporation under the repeated frequency laser irradiation was studied by using 1064nm Nd∶YAG laser.After theoretical analysis and experimental verification,the characteristics of two measuring methods,1-on-1 and S-on-1,were analyzed based on the measuring principle of damage threshold.The irradiation laser energy was seeked by dichotomy.Each energy density was irradiated at 20 test points.Zero probability damage threshold and least square method were used to fit and determine the measurement results.The results show that for the same kind of film,the damage threshold measured by 1-on-1 method is 15.75J/cm 2 and the damage threshold measured by S-on-1 method is 11.90J/cm 2.The comparison of damage threshold and damage morphology shows that S-on-1 measurement method reflects the typical cumulative effect.The study is of great importance for the study of laser damage mechanism and influencing factors of thin film.
关 键 词:薄膜 损伤阈值 测量方式 累积效应 二分查找 最小二乘法
分 类 号:TN247[电子电信—物理电子学] O484.41[理学—固体物理]
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