光敏电阻、光敏二极管各种特性测量实验的设计  被引量:2

Design of Various Characteristics of Photosensitive Resistance and Photodiode

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作  者:于晓春[1] 李洪宇[1] Yu Xiao-chun;Li Hong-yu(University of mechanical and electronic engineering,Shandong University of Science and Technology,Shandong Qingdao 266000)

机构地区:[1]山东科技大学机械电子工程学院,山东青岛266000

出  处:《电子质量》2018年第4期15-19,共5页Electronics Quality

摘  要:通过实验,得到了发光二极管的各种特性及电光驱动特性,一些复合半导体材料(如GaAs等)形成的PN结正向偏置时,空穴与电子在PN结复合产生特定波长的光,其发光波长与相应半导体材料的能级间隙Eg有关。利用具有光电导效应的材料(如硅、锗等本证半导体与如硫化镉、硒化镉、氧化铅等杂质半导体)可以制成电导随入射光度量变化的器件,叫做光电探测器,即光敏电阻。光敏电阻的工作原理是光电导效应。如果没有光射入,其阻值较高,如果有光射入,其阻值变小。当光的强度逐渐增大时,光敏电阻阻值逐渐变小,停止光照了,光敏电阻的阻值与无光照时相同,即是原值。它是由涂于玻璃底板上的一薄层半导体材料构成,其上装有梳妆电极。发光二极管作为光源,光敏电阻、光敏二极管在受到光照时,光敏电阻阻值的变化和光敏二极管具有伏安特性。The various characteristic of the light emitting diode is obtained by experiments,and the electric drive characteristics,some compound semiconductor materials(such as GaAs)formation of the p-n junction forward biased,holes and electrons in PN junction compound produce certain wavelengths of light,the light wavelength associated with the energy of a corresponding semiconductor material gap Eg.Use of effect of photoconductive materials(such as silicon,germanium,the certificate of semiconductor and such as cadmium sulphide selenide cadmium,lead oxide impurities such as semiconductors)can be made into conductivity changing with incident light measuring device,Called the photoelectric detector,that is,photosensitive resistance.Photoresistor works by photoconductive effect.If there is no light,the resistance is higher,and if there is light,the resistance is smaller.When the intensity of light increases gradually,the resistance value of photosensitive resistance gradually becomes smaller and the light is stopped,and the resistance value of the photosensitive resistor is the same as that in the absence of light,which is the original value.It is composed of a thin layer of semiconducting material coated on the glass floor,which is fitted with a dressing electrode.light-sensitive resistance and photosensitive diodes have the volt ampere characteristics as light source,photoresistor and photodiode in light.

关 键 词:发光二极管 光敏电阻 光敏二极管 通过实验 光照特性 

分 类 号:TM935.1[电气工程—电力电子与电力传动]

 

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