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作 者:陈佳熠 陈启超 李政雄 陶立[1] CHEN Jiayi;CHEN Qichao;LI Zhengxiong;TAO Li(School of Material Science and Engineering,Southeast University,Nanjing 211189,China)
机构地区:[1]东南大学材料科学与工程学院,江苏南京211189
出 处:《中国材料进展》2018年第6期448-452,共5页Materials China
基 金:国家自然科学基金资助项目(51602051);中央高校基本科研业务费专项资金资助项目(2242017R30008)
摘 要:二维层片状材料兼具高机械韧性、可调控带隙与光学透明度,以及高的表面体积比等优越性能,为新型柔性纳米电子器件和传感器的研究提供了广阔的平台。介绍了两种新兴的单质二维材料,硅烯和磷烯及其器件的电学性能和稳定性。硅烯的器件实验研究因空气敏感性问题一直停滞不前,而最近的三明治夹层转移与移植法实现了硅烯晶体管的首次亮相。相关实验观测证实了理论预测的狄拉克能带结构,即双极电输运机制。室温静电学表征观测到约100 cm~~2/(V·s)的载流子迁移率以及10倍的栅极调制,揭示出单原子层硅通道比石墨烯具有更高的栅极调控能力。VA族的磷烯结合石墨烯和过渡金属硫化物两者优点于一身,拥有较高的载流子迁移率和可调控的适中直接带隙,是目前较理想的二维半导体材料,即使在塑料基底上仍可达到310~1500 cm2/(V·s)的高载流子迁移率以及10~3~10~5的栅极调制。这些研究进展为新型纳米器件的发展提供了广阔前景。Two-dimensional(2D)atomic sheets yield collective properties of mechanical flexibility,electrical control,optical transparency and high surface to volume ratio,which hold promise for the research of advanced flexible nanoelectronics and sensors.This work explores two newly emerging 2D materials,silicene and phosphorene(the Si and P equivalent to graphene)in terms of their air-stability and device properties.Long-lasting air-stability and portability issues of silicene were addressed through recent effort,allowing silicene transistor to make its debut,corroborating theoretically predicted ambipolar transport indicating Dirac band structure.The carrier mobility of about 100 cm 2/(V·s)and 10 times of grid modulation at room temperature were observed by electrostatic characterization on prototype silicene transistors indicating that the single-atom silicon channel has higher gate regulation capacity than graphene.Phosphorene,phosphorus analog to graphene,is a promising semiconductor for 2D nanoelectronics due to its high carrier mobility and adjustable direct band gap,which can reach high carrier mobility of 310~1500 cm 2/(V·s)and 10 3~10 5 grid modulation even on flexible polyimide substrate.This recent progress on silicene and phosphorene represent a renewed opportunity for future nanoscale and flexible devices.
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