基于特定集电极电流下饱和压降的IGBT模块老化失效状态监测方法  

Condition Monitoring for IGBT Module Aging Failure on V_(CE(on)) under Certain I_C Conditions

作　　者：李亚萍[1,2] 周雒维[1] 孙鹏菊[1] 彭英舟 蔡杰 Li Yaping;Zhou Luowei;Sun Pengju;Peng Yingzhou;Cai Jie(State Key Laboratory of Power Transmission Equipment&System Security and New Technology Chongqing University Chongqing 400044 China;College of Mechanical and Electrical Engineering Shihezi University Shihezi 832000 China)

机构地区：[1]输配电装备及系统安全与新技术国家重点实验室(重庆大学),重庆400044 [2]石河子大学机械电气工程学院,石河子832000

出　　处：《电工技术学报》2018年第14期3202-3212,共11页Transactions of China Electrotechnical Society

基　　金：国家自然科学基金重点项目资助(51137006)

摘　　要：为提高功率变流器的可靠性,提出一种基于特定条件下集射极饱和压降V_(CE(on))的IGBT模块老化失效状态监测方法。特定集电极电流条件指的是不同温度下的多条IC-VCE输出特性曲线的交点对应的集电极电流,监测对应的V_(CE(on)),根据V_(CE(on))的变化可以对IGBT模块的健康状态进行评估。该方法可以忽略芯片结温对评估结果的影响。首先根据IGBT模块饱和压降的等效模型,结合IGBT模块输出特性曲线的特点,分析得出曲线交点处对应的V_(CE(on))不受温度影响,然后阐明IGBT模块老化对V_(CE(on))的影响关系。最后分别采用对IGBT模块进行加速老化实验验证方法和人为逐根剪断键合线模拟老化情况的验证方法,对不同工况下IGBT模块的V_(CE(on))进行测量和分析。实验结果表明,在特定条件下,IGBT模块的V_(CE(on))不受芯片结温的影响,只与模块老化程度有关,可作为IGBT模块老化状态监测的特征参数,实验结果与理论分析一致。In order to improve the reliability of power converter,a method for monitoring aging failure in insulated gate bipolar transistor(IGBT)module is presented based on VCE(on)under certain condition.The VCE(on)is monitored under certain collector current IC condition,that is the crossover point of output characteristic curves under different temperatures.Using this method,the health status of IGBT module can be evaluated according to VCE(on),and the chip junction temperature effect on the results of the assessment can be ignored.Firstly,based on VCE(on)equivalent model of the structure of IGBT and the output characteristic curves of IGBT module,the crossover point of the collector current was analyzed.It is shown that the corresponding VCE(on)was not affected by temperature.Then,the paper illuminated the impact of the aging failure on VCE(on).Finally,two experiments,i.e.accelerated aging tests and cutting off the bond wires one by one,were conducted.The experimental results indicate that the VCE(on)of IGBT module is not affected by junction temperature under certain collector current condition,but only related to the aging situation of modules.The VCE(on)under certain condition can be used as aging precursor of condition monitoring for IGBT module.The experimental results are accorded with the theory analysis.

关 键 词：可靠性 老化 失效 状态监测 IGBT模块 

分 类 号：TM46[电气工程—电器]