不同温度下GeTe相变材料的电性能研究  

Electrical properties of GeTe films at different temperatures

作　　者：张苗苗 曲胜 王艳艳[1] 魏猛[1] 张继华[1] ZHANG Miaomiao;QU Sheng;WANG Yanyan;WEI Meng;ZHANG Jihua(Collaboration Innovation Center of Electric Materials and Devices,State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science&Technology of China,Chengdu 610054,China)

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,核心电子材料与器件协同创新中心,四川成都610054

出　　处：《电子元件与材料》2018年第8期21-25,共5页Electronic Components And Materials

基　　金：电子科技大学核心电子材料与器件协同创新中心(ICEM2015-4002).

摘　　要：Ge-Te系化合物因其具有非常高的电阻比、快响应速度和较高的相变温度而在高性能微波开关方面有重要的应用潜力。本文研究了在室温下磁控溅射法制备的Ge Te薄膜电性能随温度的变化规律。研究表明,当薄膜温度从室温升高到170℃,薄膜保持非晶态,电阻率从24Ω·m逐渐下降到0.72Ω·m,空穴的迁移率保持在10^(-1)m^2/(V·s)左右,交流阻抗谱表明Ge Te更多的表现为电容特性并且能稳定的保持在高阻态。当温度升高到210℃后,薄膜晶化,载流子浓度和迁移率迅速增加,Ge Te显示出电阻特性,其电阻率骤降到3.8×10^(-6)Ω·m(电阻率变化达6个数量级)。分析了Ge Te薄膜在不同温度电性能发生变化的原因,相变前电阻率随温度缓慢下降主要归因于载流子浓度增加;而相变后迁移率的大幅上升是Ge Te电阻率显著下降的主要原因。Because of their excellent performance of high resistance ratio,quick response speed and high phase transition temperature,the Ge-Te system compounds have important and potential application in high performance microwave switch.At different temperatures,the electrical properties of GeTe films prepared by magnetron sputtering at room temperature were studied.When the temperature increases from room temperature to 170℃,the resistivity gradually decreases from 24Ω·m to 0.72Ω·m because of the increase of carrier concentration.The AC impedance spectroscopy shows that GeTe behaves more like the capacitor and can be maintained in a stable state of high resistance.When the temperature rises to 210℃,the resistivity decreases to 3.8×10^-6Ω·m sharply,reaching the ratio of 106.The significant increase of mobility is the main reason and GeTe shows the characteristics of resistance.

关 键 词：GeTe薄膜 相变材料 微波开关 电阻 载流子浓度 迁移率 

分 类 号：TB213[一般工业技术—工程设计测绘]