高熵合金AlCrNbSiTiV氮化物薄膜溅镀参数的优化  

Optimization of process parameters for magnetron sputtering of high-entropy alloy (AlCrNbSiTiV) nitride thin films

作　　者：万松峰[1] 许春耀 张钰乾 WAN Song-feng;XU Chun-yao;ZHANG Yu-qian(Department of Mechanical and Electrical Engineering,Dongguan Polytechnic,Dongguan 523808,China)

机构地区：[1]东莞职业技术学院机电工程系,广东东莞523808 [2]龙华科技大学机械工程系,台湾桃园33306

出　　处：《电镀与涂饰》2018年第15期677-682,共6页Electroplating & Finishing

基　　金：2018广东大学生科技创新培育资金立项项目(pdjhb0901);广东省教育厅2017年度特色创新类项目(2017GGXJK094);2018东莞市社会科技发展项目(20185071561262)

摘　　要：以AlCrNbSiTiV为靶材,用反应式磁控溅镀系统分别在住友BNX20刀具和硅晶片上沉积高熵合金氮化物(AlCrNbSiTiV)N薄膜。采用田口方法的L9(34)正交表考察了沉积时间、基材偏压、溅射功率和基材温度对沉积速率、薄膜硬度和刀具寿命的影响,通过方差分析(ANOVA)确定了影响各性能的主要因素。对信噪比(S/N)进行灰关联分析以实现多目标优化,得出最佳工艺参数为:沉积时间20min,基材偏压-100V,溅射功率250W,基材温度400°C。在该条件下,沉积速率为17.28nm/min,薄膜硬度达到2814HV,刀具寿命2.50m。High-entropy alloy nitride(AlCrNbSiTiV)N thin films were deposited on Sumitomo cutter BNX20 and silicon wafer by reactive magnetron sputtering from AlCrNbSiTiV target.The effects of deposition time,substrate bias voltage,sputtering power,and substrate temperature on deposition rate,film hardness,and cutter’s life were examined based on Taguchi method using a L9(34)orthogonal array.The factors having the greatest impact on individual performance were identified by analysis of variance(ANOVA).The grey relational analysis on signal-to-noise(S/N)ratios were conducted for a multi-objective optimization.The optimal process parameters were determined as follows:deposition time 20 min,substrate bias voltage?100 V,sputtering power 250 W,and substrate temperature 400°C.The deposition rate,film hardness,and cutter’s life were 17.28 nm/min,2 814 HV,and 2.50 m respectively under the optimized conditions.

关 键 词：高熵合金 氮化物 薄膜 刀具 直流反应式磁控溅射 田口方法 灰关联分析 多目标优化 

分 类 号：TG13[一般工业技术—材料科学与工程] TG174.44[金属学及工艺—合金]