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作 者:余舒娴 翁超 崔泰城 史化 魏雪文 范昌荣 柴国庆 YU Shu-xian;WENG Chao;CUI Tai-cheng;SHI Hua;WEI Xue-wen;FAN Changrong;CHAI Guo-qing(Fuzhou Boe Optoelectonics Tcchnology Co.,Ltd,Fujian,Fuhou 350300,China)
机构地区:[1]福州京东方光电科技有限公司
出 处:《电子世界》2018年第17期9-11,15,共4页Electronics World
摘 要:为了降低Array TFT基板生产过程中的Data Open(DO)不良,提高成品率,本文研究并分析了玻璃基板刻蚀粗糙度、翘曲率、Particle数值三个因素对DO不良的影响。首先,使用不同状态的玻璃基板进行DO不良测试。然后,通过原子力显微镜(AFM)、扫描电子显微镜(SEM)、能量色散X射线光谱仪(EDX)、台阶仪(Step Profiler)对玻璃基板的表面状态和组成成分进行测试。最后,通过实验数据和表征分析结果对玻璃基板的DO不良进行分析。实验结果表明:(1)A玻璃基板刻蚀前后粗糙度比:刻蚀后/刻蚀前=3.44,B玻璃的为1.42。对于双氧水基铜刻蚀液,不同玻璃的刻蚀效果敏感于玻璃成分差异。而且,玻璃基板的粗糙度和DO不良率成正相关,刻蚀后表面粗糙度越小,DO发生率越低;(2)玻璃基板越平整即玻璃翘曲率越小,DO不良率越低;(3)玻璃基板上的Particle越低(80以下/Glass),玻璃表面越干净,DO发生率越低。对这三个因素与DO不良关系的研究将为生产过程中的DO不良改善提供依据。In order to reduce the Data Open(DO)defect in the Array TFT production process and improve the yield,the effects of three factors such as the roughness,the smoothness and the particle value of the glass substrate on DO defect are studied and analyzed.First of all,DO defect test is carried out using glass substrate in different states.Then,the surface structure and composition of the glass substrate are tested by Atomic Force Microscope(AFM),Scanning Electron Microscope(SEM),Energy Dispersive X-ray spectrometer(EDX)and Step Profiler.At last,DO defects of glass substrate were analyzed through experimental data and characterization analysis results.The Result indicated that:(1)The roughness ratio of A glass substrates(after etching/before etching)is 3.44,while B is 1.42.The etch effect of different glass in H2O2-base etchant(Including F-)is sensitive to its composition.Moreover,the roughness of substrate is positively correlated with the rate of DO defect,and more smooth the glass surface,the lower occurrence rate of DO.(2)The more flat the glass substrate is,the smaller the warping rate of glass is,and the lower occurrence rate of DO is.(3)The total particle on the glass substrate is under 80,and the occurrence rate of DO is positively correlated with the particle amount.According to results,the study of the relationship between these three factors and provide basis for the improvement of DO in production process.
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