低能N^+注入选育利普司他汀高产菌株的研究  

Study on breeding of high yield lipstatin-producing strains by low energy nitrogen ion implantation

作　　者：李玲[1] 南秋利[1] 胡永红[2] LI Ling;NAN Qiuli;HU Yonghong(Chengxian College,Southeast University,Nanjing 210088,China;School of Biotechnology and Pharmaceutical Engineering,Nanjing Tech University,Nanjing 211816,China)

机构地区：[1]东南大学成贤学院,南京210088 [2]南京工业大学生物与制药工程学院,南京211816

出　　处：《中国科技论文》2018年第12期1372-1374,1408,共4页China Sciencepaper

基　　金：国家自然科学基金资助项目(31471692);江苏省政策引导类(产学研合作)-前瞻性联合研究项目(BY2016005-07)

摘　　要：利用N^+注入技术对出发菌株Stretomyces toxytricini NJLE202进行诱变选育,考察20keV能量下不同剂量N^+注入对菌株存活率和正负突变率的影响。最佳注入剂量下对出发菌株经过多轮诱变选育,筛选得到1株利普司他汀高产菌株C-1-34,较出发菌株效价提高了约33.7%,且遗传稳定性良好。The nitrogen ion injection mutagenesis has been used to mutagenize the strain Stretomyces toxytricini NJLE202.When the used energy is 20 keV,the influence of different nitrogen ion doses on the survival rate,positive and negative production mutation rate has been investigated.Under the optimal conditions,a high yield lipstatin-producing strain is obtained and named C-1-34.Compared with the original strain,the titer is increased by about 33.7%.This mutant strain shows high genetic stability.

关 键 词：生物技术 利普司他汀 Stretomyces toxytricini N+注入 诱变选育 

分 类 号：Q319.2[生物学—遗传学]