PTCDI-C_8作为阴极修饰层提高钙钛矿太阳能电池的性能（英文）  

Performance Improvement of Planar Heterojunction Perovskite Solar Cells by Using PTCDI-C_8 as Cathode Buffer Layer

作　　者：李志成 妙亚 刘少伟 王亚凌[1,2] 曹焕奇 秦文静[1,2] 杨利营 印寿根 LI Zhi-cheng;MIAO Ya;LIU Shao-wei;WANG Ya-ling;CAO Huan-qi;QIN Wen-jing;YANG Li-ying;YIN Shou-gen(Key Laboratory of Display Materials and Photoelectric Devices,Education Ministry of China,School of Materials Science and Engineering, Tianjin University of Technology,Tianjin 300384,China;Tianjin Key Laboratory for Photoelectric Materials and Devices,Tianjin University of Technology,Tianjin 300384,China)

机构地区：[1]天津理工大学材料科学与工程学院显示材料与光电器件教育部重点实验室,天津300384 [2]天津理工大学天津市光电显示材料与器件重点实验室,天津300384

出　　处：《发光学报》2018年第9期1291-1296,共6页Chinese Journal of Luminescence

基　　金：Supported by National Natural Science Foundation of China(51402214;61504097);Natural Science Foundation of Tianjin(17JCYBJC21000)~~

摘　　要：采用N,N'-二正辛烷基-3,4,9,10-苝四甲酰二亚胺(PTCDI-C8)对钙钛矿电池电子传输层(PCBM)进行界面修饰以减少PCBM与Al电极之间的漏电流,提高阴极的电子收集效率。通过调节PTCDI-C8薄膜的厚度优化界面接触和电子传输性能。实验结果表明:当PTCDI-C8薄膜的厚度为20 nm时得到的器件性能最优。光电转换效率(PCE)由5.26%提高到了8.65%,开路电压(Voc)为0.92 V,短路电流(Jsc)为15.68 m A/cm2,填充因子(FF)为60%。PTCDI-C8能够有效阻挡空穴向阴极传输,同时PTCDI-C8具有较高的电子迁移率以及较高的稳定性,在增加电子传输的同时,可减少环境对PCBM的侵蚀,提高了器件的稳定性。N,N′-di-n-octyl-3,4,9,10-perylene tetracarboxylic diimide(PTCDI-C8)was used as the interfacial layer of the electron transport layer PCBM to reduce the leakage current between PCBM and Al electrode and to improve the electron collecting efficiency of cathode.By adjusting the thickness of PTCDI-C8 film,the interfacial contact and electron transport properties were optimized.Compared with the control devices,the power conversion efficiency(PCE)of the optimal device achieves 8.65%with 20 nm thickness PTCDI-C8 film,with an open circuit voltage(V oc)of 0.92 V,a short circuit current(J sc)of 15.68 mA/cm 2 and a fill factor(FF)of 60%.PTCDI-C8 layer can effectively block the hole transmitting to the cathode.With a higher electron mobility and stability,PTCDI-C8 layer can reduce the environment erosion on the PCBM.In summary,the introduction of PTCDI-C8 film as cathode buffer layer improves the performance and stability of the device.

关 键 词：钙钛矿太阳能电池 界面修饰 空穴阻挡 电子传输 

分 类 号：TM914.4[电气工程—电力电子与电力传动]